3 research outputs found
Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires
The resistance R of a high density network of 6 nm diameter Bi wires in
porous Vycor glass is studied in order to observe its expected semiconductor
behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies
approximately as ln(1/T), the order-of-magnitude of the resistance rise, as
well as the behavior of the magnetoresistance are consistent with localization
and electron-electron interaction theories of a one-dimensional disordered
conductor in the presence of strong spin-orbit scattering. We show that this
behaviour and the surface-enhanced carrier density may mask the proposed
semimetal-to-semiconductor transition for quantum Bi wires.Comment: 19 pages total, 4 figures; accepted for publication in Phys. Rev.
Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance
We report the observation of a dependence of the low temperature resistance
of individual single-crystal bismuth nanowires on the Aharonov-Bohm phase of
the magnetic flux threading the wire. 55 and 75-nm wires were investigated in
magnetic fields of up to 14 T. For 55 nm nanowires, longitudinal
magnetoresistance periods of 0.8 and 1.6 T that were observed at magnetic
fields over 4 T are assigned to h/2e to h/e magnetic flux modulation. The same
modes of oscillation were observed in 75-nm wires. The observed effects are
consistent with models of the Bi surface where surface states give rise to a
significant population of charge carriers of high effective mass that form a
highly conducting tube around the nanowire. In the 55-nm nanowires, the Fermi
energy of the surface band is estimated to be 15 meV. An interpretation of the
magnetoresistance oscillations in terms of a subband structure in the surface
states band due to quantum interference in the tube is presented.Comment: 30 pages, 9 figure
Diameter-dependent thermopower of Bi nanowires
We present a study of electronic transport in individual Bi nanowires of
large diameter relative to the Fermi wavelength. Measurements of the resistance
and thermopower of intrinsic and Sn-doped Bi wires with various wire diameters,
ranging from 150-480 nm, have been carried out over a wide range of
temperatures (4-300 K) and magnetic fields (0-14 T). We find that the
thermopower of intrinsic Bi wires in this diameter range is positive (type-p)
below about 150 K, displaying a peak at around 40 K. In comparison, intrinsic
bulk Bi is type-n. Magneto-thermopower effects due to the decrease of surface
scattering when the cyclotron diameter is less than the wire diameter are
demonstrated. The measurements are interpreted in terms of a model of diffusive
thermopower, where the mobility limitations posed by hole-boundary scattering
are much less severe than those due to electron-hole scattering.Comment: 32 pages, 12 figures. Previous version replaced to improve
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