Room Temperature Ionic Liquid as Electrolyte for Lithium Ion Battery

Symposium: Physical and Analytical Electrochemistry: no. I3, Molten Salts and Ionic Liquids 18published_or_final_version222nd Meeting of Electrochemical Society and Pacific Rim Meeting of Related Societies on Electrochemical and Solid-State Science (PRiME 2012), Honolulu, Hawaii, USA, 7-12 October 2012. In Electrochemical Society Meeting Abstracts, v. MA2012-02, abstract no. 372

Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode

A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al 2O 3 layer. The memory exhibited good reading endurance and retention characteristics. © 2011 IEEE.published_or_final_versio

Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

A structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.published_or_final_versio

Resistive switching in aluminum/anodized aluminum film structure without forming process

Metal-insulator-metal (MIM) structure was fabricated by partially anodizing aluminum film followed by deposition of another aluminum film. Unipolar resistive switching between a high-resistance state and a low-resistance state with a high resistance ratio (> ∼ 10 4) was observed from the structure. The switching occurred without the requirement of a forming process, which was attributed to the pre-existing conductive filaments in the Al-rich Al x O y layer formed by the anodization. Each resistance state exhibited Ohmic behavior which could be explained by the metallic conduction and electron hopping from one isolated state to the next in the Al-rich Al x O y layer. The MIM structure showed good memory characteristics. © 2009 American Institute of Physics.published_or_final_versio

Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodes

An Al-rich Al 2O 3 thin film was deposited on a p-type silicon substrate by radio frequency sputtering to form Al/ Al-rich Al 2O 3/p-Si diodes. The current-voltage (I-V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-V characteristics were greatly affected by the charge trapping in the oxide layer, i.e., the electron trapping significantly reduced the reverse current while the hole trapping enhanced the current significantly. However, the charge trapping did not produce a large change in the forward I-V characteristic. © 2009 IEEE.published_or_final_versio

Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films

In this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.published_or_final_versio

Effect of Ordering on Spinodal Decomposition of Liquid-Crystal/Polymer Mixtures

Partially phase-separated liquid-crystal/polymer dispersions display highly fibrillar domain morphologies that are dramatically different from the typical structures found in isotropic mixtures. To explain this, we numerically explore the coupling between phase ordering and phase separation kinetics in model two-dimensional fluid mixtures phase separating into a nematic phase, rich in liquid crystal, coexisting with an isotropic phase, rich in polymer. We find that phase ordering can lead to fibrillar networks of the minority polymer-rich phase

Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.published_or_final_versio

Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

Influence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.published_or_final_versio

Evaluation of the effect of appropriate antimicrobial therapy on mortality associated with Acinetobacter nosocomialis bacteraemia

AbstractAppropriate antimicrobial therapy is effective for severe infections caused by Acinetobacter baumannii, but efficacy for other Acinetobacter species remains to be established. The current study was designed to determine whether appropriate antimicrobial therapy reduces the mortality of patients with Acinetobacter nosocomialis bacteraemia. A 9-year retrospective study of 266 patients with monomicrobial A. nosocomialis bacteraemia was conducted at a large teaching hospital in Taiwan. Multivariable analysis was performed to evaluate the impact on 14-day mortality according to clinical characteristics, severity of disease and use of appropriate antimicrobial therapy. The influence of APACHE II score on the impact of appropriate antimicrobial therapy was analysed by including an interaction term. The overall 14-day mortality was 9.4%. Multivariable analysis revealed that APACHE II score was the only factor significantly associated with mortality (odds ratio, 1.18; 95% confidence interval, 1.11–1.25; p <0.001). Appropriate antimicrobial therapy was not associated with reduced mortality regardless of disease severity. In the subgroup analyses in patients with different clinical conditions, APACHE II score was consistently an independent factor for 14-day mortality, and appropriate antimicrobial therapy did not affect the mortality in any group. In conclusion, severity of disease, based on the APACHE II score, was the independent risk factor for 14-day mortality for patients with monomicrobial A. nosocomialis bacteraemia, even in different clinical conditions. In contrast, appropriate antimicrobial therapy did not reduce the 14-day mortality. The result highlighted a different effect of appropriate antimicrobial therapy on infections caused by two phenotypically undifferentiated Acinetobacter