Strain engineering on graphene towards tunable and reversible hydrogenation

Graphene is the extreme material for molecular sensory and hydrogen storage applications because of its two-dimensional geometry and unique structure-property relationship. In this Letter, hydrogenation of graphene is discussed in the extent of intercoupling between mechanical deformation and electronic configuration. Our first principles calculation reveals that the atomic structures, binding energies, mechanical and electronic properties of graphene are significantly modified by the hydrogenation and applied strain. Under an in-plane strain of 10 %, the binding energies of hydrogen on graphene can be improved by 53.89 % and 23.56 % in the symmetric and anti-symmetric phase respectively. Furthermore the instability of symmetrically bound hydrogen atoms under compression suggests a reversible storage approach of hydrogen. In the anti-symmetric phase, the binding of hydrogen breaks the sp2 characteristic of graphene, which can be partly recovered at tensile strain. A charge density based analysis unveils the underline mechanisms. The results reported here offer a way not only to tune the binding of hydrogen on graphene in a controllable and reversible manner, but also to engineer the properties of graphene through a synergistic control through mechanical loads and hydrogen doping

Engineering graphene by oxidation: a first principles study

Graphene epoxide, with oxygen atoms lining up on pristine graphene sheets, is investigated theoretically in this Letter. Two distinct phases: metastable clamped and unzipped structures are unveiled in consistence with experiments. In the stable (unzipped) phase, epoxy group breaks underneath sp2 bond and modifies the mechanical and electronic properties of graphene remarkably. The foldable epoxy ring structure reduces its Young's modulus by 42.4%, while leaves the tensile strength almost unchanged. Epoxidation also perturbs the pi state and opens semiconducting gap for both phases, with dependence on the density of epoxidation. In the unzipped structures, localized states revealed near the Fermi level resembles the edge states in graphene nanoribbons. The study reported here paves the way for oxidation-based functionalization of graphene-related materials.Comment: 17 pages (4 figures, 1 table

Strain Engineering of Antimonene by a First-principles Study: Mechanical and Electronic Properties

In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its most stable beta-phase using first-principles calculations. The upper region of its valence band is found to solely consist of lone pair p-orbital states, which are by nature more delocalized than the d-orbital states in transition metal dichalcogenides, implying superior transport performance of antimonene. The Young's and shear moduli of beta-antimonene are observed to be ~25% higher than those of bulk antimony, while the hexagonal lattice constant of the monolayer reduces significantly (~5%) from that in bulk, indicative of strong inter-layer coupling. The ideal tensile test of beta-antimonene under applied uniaxial strain highlights ideal strengths of 6 GPa and 8 GPa, corresponding to critical strains of 15% and 17% in the zigzag and armchair directions, respectively. During the deformation process, the structural integrity of the material is shown to be better preserved, albeit moderately, in the armchair direction. Interestingly, the application of uniaxial strain in the zigzag and armchair directions unveil direction-dependent trends in the electronic band structure. We find that the nature of the band gap remains insensitive to strain in the zigzag direction, while strain in the armchair direction activates an indirect-direct band gap transition at a critical strain of 4%, owing to a band switching mechanism. The curvature of the conduction band minimum increases during the transition, which suggests a lighter effective mass of electrons in the direct-gap configuration than in the free-standing state of equilibrium. The work function of free-standing beta-antimonene is 4.59 eV and it attains a maximum value of 5.07 eV under an applied biaxial strain of 4%