PVI-DSO: Leveraging Planar Regularities for Direct Sparse Visual-Inertial Odometry

The monocular Visual-Inertial Odometry (VIO) based on the direct method can leverage all the available pixels in the image to estimate the camera motion and reconstruct the environment. The denser map reconstruction provides more information about the environment, making it easier to extract structure and planar regularities. In this paper, we propose a monocular direct sparse visual-inertial odometry, which exploits the plane regularities (PVI-DSO). Our system detects coplanar information from 3D meshes generated from 3D point clouds and uses coplanar parameters to introduce coplanar constraints. In order to reduce computation and improve compactness, the plane-distance cost is directly used as the prior information of plane parameters. We conduct ablation experiments on public datasets and compare our system with other state-of-the-art algorithms. The experimental results verified leveraging the plane information can improve the accuracy of the VIO system based on the direct method

Prompt, Plan, Perform: LLM-based Humanoid Control via Quantized Imitation Learning

In recent years, reinforcement learning and imitation learning have shown great potential for controlling humanoid robots' motion. However, these methods typically create simulation environments and rewards for specific tasks, resulting in the requirements of multiple policies and limited capabilities for tackling complex and unknown tasks. To overcome these issues, we present a novel approach that combines adversarial imitation learning with large language models (LLMs). This innovative method enables the agent to learn reusable skills with a single policy and solve zero-shot tasks under the guidance of LLMs. In particular, we utilize the LLM as a strategic planner for applying previously learned skills to novel tasks through the comprehension of task-specific prompts. This empowers the robot to perform the specified actions in a sequence. To improve our model, we incorporate codebook-based vector quantization, allowing the agent to generate suitable actions in response to unseen textual commands from LLMs. Furthermore, we design general reward functions that consider the distinct motion features of humanoid robots, ensuring the agent imitates the motion data while maintaining goal orientation without additional guiding direction approaches or policies. To the best of our knowledge, this is the first framework that controls humanoid robots using a single learning policy network and LLM as a planner. Extensive experiments demonstrate that our method exhibits efficient and adaptive ability in complicated motion tasks

Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties

The aggressive scaling of MOSFETs has created interest in using high-mobility III-V channel materials to replace traditional strained Si. However, it has been challenging to form high- $\kappa$ dielectrics that can passivate III-V surfaces with a low interface state density (Dit). We deposited $LaLuO_3$ high- dielectric layer by ALD on sulfur-passivated GaAs substrates. The precursors lanthanum tris(N,N'-diisopropylformamidinate), and lutetium tris(N,N'-diethylformamidinate) reacted with water vapor at $350^oC$. The compositional ratio of La:Lu was about 1:1 by using one cycle of $La_2O_3$ followed by one cycle of $Lu_2O_3$ in one complete cycle of $LaLuO_3$. Both high-resolution XRD analysis and TEM showed that ALD $LaLuO_3$ formed epitaxially on GaAs(111)A substrates, as shown in Figures 1 and 2, respectively. The epitaxial layer exhibited a cubic structure with a lattice constant smaller than GaAs by 3.8%. The $LaLuO_3$ film had a high degree of crystalline perfection and was relaxed and not strained. Electrical characterizations showed the measured dielectric constant of around 30, which is close to its bulk crystalline value. The interface had a low interface state density $(D_{it})$ of $\sim 7×10^{11} cm^{-2}eV^{-1}$. The amount of lattice mismatch can be engineered by choosing various rare-earth oxides. ALD La2O3 formed cube-on-cube epitaxy on GaAs(111)A with a lattice constant just +0.9% larger than that of the substrate. The mismatch can be reduced to zero by adding some $Y_2O_3$ to the $La_2O_3$, using yttrium tris(N,N'-diisopropylactamidinate)/$H_2O$ cycles. Perfect zero-mismatched epitaxy was achieved on GaAs(111)A by depositing $La_{1.7}Y_{0.3}O_3$, as shown in Figure 3. The effects of mismatch on the electrical properties of eip-$LaYO_3$ on GaAs(111)A were studied. These results suggest that atomic layer epitaxy of rare-earth oxides/GaAs(111)A is a promising structure for future generations of high-power/high-frequency analog devices or high-speed logic devices.Chemistry and Chemical Biolog

Reactivating aberrantly hypermethylated p15 gene in leukemic T cells by a phenylhexyl isothiocyanate mediated inter-active mechanism on DNA and chromatin

<p>Abstract</p> <p>Background</p> <p>We have previously demonstrated that phenylhexyl isothiocyanate (PHI), a synthetic isothiocyanate, inhibits histone deacetylases and remodels chromatins to induce growth arrest in HL-60 myeloid leukemia cells in a concentration-dependent manner.</p> <p>Methods</p> <p>To investigate the effect of PHI, a novel histone deacetylases inhibitor (HDACi), on demethylation and activation of transcription of <it>p15 </it>in acute lymphoid leukemia cell line Molt-4, and to further decipher the potential mechanism of demethylation, DNA sequencing and modified methylation specific PCR (MSP) were used to screen <it>p15</it>-M and <it>p15</it>-U mRNA after Molt-4 cells were treated with PHI, 5-Aza and TSA. DNA methyltransferase 1 (DNMT1), 3A (DNMT3A), 3B (DNMT3B) and <it>p15 </it>mRNA were measured by RT-PCR. P15 protein, acetylated histone H3 and histone H4 were detected by Western Blot.</p> <p>Results</p> <p>The gene <it>p15 </it>in Molt-4 cells was hypermethylated and inactive. Hypermethylation of gene <it>p15 </it>was attenuated and <it>p15 </it>gene was activated de novo after 5 days exposure to PHI in a concentration-dependent manner. DNMT1 and DNMT3B were inhibited by PHI (P < 0.05). Alteration of DNMT3A was not significant at those concentrations. Acetylated histone H3 and histone H4 were accumulated markedly after exposure to PHI.</p> <p>Conclusion</p> <p>PHI could induce both DNA demethylation and acetylated H3 and H4 accumulation in Molt-4 cells. Hypermethylation of gene <it>p15 </it>was reversed and <it>p15 </it>transcription could be reactivated de novo by PHI.</p