QTL Mapping of Seed Vigor of Backcross Inbred Lines Derived From Oryza longistaminata Under Artificial Aging

Seed vigor is an important character of seed quality that promotes rice to germinate rapidly from soil and developing to a strong seedling, especially in the current rice direct-sowing production system. However, previous studies for seed vigor mainly concentrate in cultivars, and less reports involving in wild rice. In this study, 152 backcross inbred lines (BILs) derived from wild rice Oryza longistaminata were genotyped with re-sequencing technology, and QTLs for seed vigor related traits under normal and artificial aging treatment were analyzed. Totally, 36 QTLs were detected, of which, eight for germination potential (GP), 10 for germination rate (GR), 9 for seedling length (SL), and 9 for root length (RL). Among these, 14 novel QTLs were identified from O. longistaminata. Of which, six QTLs were related to germination, and eight related to seedling growth under aging stress. What’s more, the major QTLs q9SL1.1, q6SL1.1, and q3SL1.1 for seedling length were fallen in the same locus and fine-mapped an interval about 90 Kb. The major QTLs q9GR8.1 and q9GP8.1 related with germination were fine-mapped to an interval about 90 Kb. This work will provide us basis for breeding of high seed vigor rice in rice breeding programs and further cloning of these genes

Development of Elite BPH-Resistant Wide-Spectrum Restorer Lines for Three and Two Line Hybrid Rice

Hybrid rice has contributed significantly to the world food security. Breeding of elite high-yield, strong-resistant broad-spectrum restorer line is an important strategy for hybrid rice in commercial breeding programs. Here, we developed three elite brown planthopper (BPH)-resistant wide-spectrum restorer lines by pyramiding big-panicle gene Gn8.1, BPH-resistant genes Bph6 and Bph9, fertility restorer genes Rf3, Rf4, Rf5, and Rf6 through molecular marker assisted selection. Resistance analysis revealed that the newly developed restorer lines showed stronger BPH-resistance than any of the single-gene donor parent Luoyang-6 and Luoyang-9. Moreover, the three new restorer lines had broad spectrum recovery capabilities for Honglian CMS, Wild abortive CMS and two-line GMS sterile lines, and higher grain yields than that of the recurrent parent 9,311 under nature field conditions. Importantly, the hybrid crosses also showed good performance for grain yield and BPH-resistance. Thus, the development of elite BPH-resistant wide-spectrum restorer lines has a promising future for breeding of broad spectrum BPH-resistant high-yield varieties

Room temperature 2D ferromagnetism in few-layered 1TT-CrTe2_{2}

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.Comment: 9 Pages, 4 Figure

Phototransistors Based on hBN-Encapsulated NiPS₃

Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in the photoresponses at low temperatures remain blank. Here, hexagonal boron nitride (hBN)-encapsulated NiPS3 field effect transistors were fabricated by using the dry-transfer technique, indicating strong stability under atmospheric environments. The NiPS3 devices with the thickness of 10.4 nm, showed broad photoresponses from near-infrared to ultraviolet radiation at the liquid nitrogen temperature, and the minimum of rise time can reach 30 ms under the wavelength of 405 nm. The mechanism of temperature-dependent photoresponses can be deduced by competition between Schottky barrier height and thermal fluctuation. Our findings provide insights into superior phototransistors in few-layered NiPS3 for ultrasensitive light detection