5,513 research outputs found
Spin dynamics in the strong spin-orbit coupling regime
We study the spin dynamics in a high-mobility two dimensional electron gas
(2DEG) with generic spin-orbit interactions (SOIs). We derive a set of spin
dynamic equations which capture the purely exponential to the damped
oscillatory spin evolution modes observed in different regimes of SOI strength.
Hence we provide a full treatment of the D'yakonov-Perel's mechanism by using
the microscopic linear response theory from the weak to the strong SOI limit.
We show that the damped oscillatory modes appear when the electron scattering
time is larger than half of the spin precession time due to the SOI, in
agreement with recent observations. We propose a new way to measure the
scattering time and the relative strength of Rashba and linear Dresselhaus SOIs
based on these modes and optical grating experiments. We discuss the physical
interpretation of each of these modes in the context of Rabi oscillation.Comment: 8 pages, 9 figure
Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model
2D layered materials have recently attracted tremendous interest due to their
fascinating properties and potential applications. The interlayer interactions
are much weaker than the intralayer bonds, allowing the as-synthesized
materials to exhibit different stacking sequences (e.g. ABAB, ABCABC), leading
to different physical properties. Here, we show that regardless of the space
group of the 2D material, the Raman frequencies of the interlayer shear modes
observed under the typical configuration blue shift for AB stacked materials,
and red shift for ABC stacked materials, as the number of layers increases. Our
predictions are made using an intuitive bond polarizability model which shows
that stacking sequence plays a key role in determining which interlayer shear
modes lead to the largest change in polarizability (Raman intensity); the modes
with the largest Raman intensity determining the frequency trends. We present
direct evidence for these conclusions by studying the Raman modes in few layer
graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles
calculations and Raman spectroscopy. This study sheds light on the influence of
stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D
layered materials in general, and leads to a practical way of identifying the
stacking sequence in these materials.Comment: 30 pages, 8 figure
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