Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain

Electronic structures of wurtzite GaAs nanowires in the [0001] direction were studied using first-principles calculations. It was found that the band gap of GaAs nanowires experience a direct-to-indirect transition when the diameter of the nanowires is smaller than ~28 {\AA}. For those thin GaAs nanowires with an indirect band gap, it was found that the gap can be tuned to be direct if a moderate external uniaxial strain is applied. Both tensile and compressive strain can trigger the indirect-to-direct gap transition. The critical strains for the gap-transition are determined by the energy crossover of two states in conduction bands.Comment: 4 pages, 4 figure

Chemical scissors cut phosphorene nanostructures and their novel electronic properties

Phosphorene, a recently fabricated two dimensional puckered honeycomb structure of phosphorus, showed promising properties for applications of nano-electronics. In this work, we report our findings of chemical scissors effects on phosphorene, using first principles density functional theory methods. It was found that several chemical species, such as H, F, Cl and OH group, can act effectively as scissors to cut phosphorene. Phosphorus chains and nanoribbons can be obtained using different surface coverage of the chemical species. The scissor effects of these species are resulted from their strong chemical bonds with the P atoms. Species such as O, S and Se were not able to cut phosphorene nanostructures due to their lack of strong binding with P. The electronic structure calculations of the produced P-chains reveal that the saturated chain is an insulator while the pristine chain demonstrates a Dirac point at X with a Fermi velocity of 8*10E5 m/s. The obtained zigzag phosphorene nanoribbons show either metallic or semiconducting behaviors, depending on the treatment of the edge P atoms.Comment: 14 pages, 7 figures, 1 table. arXiv admin note: text overlap with arXiv:1404.599

Electronic Properties of Strained Si/Ge Core-Shell Nanowires

We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We found the band gap of the core-shell wire is smaller than that of both pure Si and Ge wires with the same diameter. This reduced band gap is ascribed to the intrinsic strain between Ge and Si layers, which partially counters the quantum confinement effect. The external strain is further applied to the nanowires for tuning the band structure and band gap. By applying sufficient tensile strain, we found the band gap of Si-core/Ge-shell nanowire with diameter larger than ~3 nm experiences a transition from direct to indirect gap.Comment: 4 figure