Treatment of hemimasticatory spasm secondary to parry-romberg syndrome via partial resection of the trigeminal nerve motor branch under intraoperative neurophysiological monitoring: A case report and literature review

Parry-Romberg syndrome (PRS) combined with hemimasticatory spasm (HMS) is a rare craniofacial disorder characterized by unilateral facial tissue atrophy with paroxysmal involuntary contractions of the jaw-closing muscles. Although a majority believe that this is a result of demyelination changes from the effect of the facial involvement of PRS on the trigeminal nerve motor branches, the mechanism of PRS is presently unclear. Moreover, the therapeutic effects of existing drugs that target PRS have not been satisfactory. For intolerable spasms of the masticatory muscles, botulinum toxin injection may temporarily relieve the symptoms of spasms. We report a case of HMS secondary to PRS that was treated via a partial resection of the trigeminal nerve motor branch under intraoperative neurophysiological monitoring

Advanced Modeling, Analysis and Control for Electrified Vehicles

International audienceElectrified vehicles, especially fully driven electric ground vehicles, are expected to provide significantly increased traffic mobility and road utilization with faster response times, lower levels of fuel consumption, less environmental pollution, electrified power sources and actuators, and the benefits of greater driving safety and convenience integrated with diverse, dynamic subsystems [...

miR-654-5p Targets HAX-1 to Regulate the Malignancy Behaviors of Colorectal Cancer Cells

Introduction. The biological roles of microRNA-654-5p (miR-654-5p) in cancers have been previously reported. However, its role in colorectal cancer (CRC) remains largely unknown. The purpose of this work was to investigate the roles and associated mechanisms in CRC. Methods. Quantitative Real-Time PCR (qRT-PCR) was utilized to explore the expression pattern of miR-654-5p in CRC cells. Cell Counting Kit-8 (CCK-8) assay, wound-healing assay, and transwell invasion assay were conducted to investigate the effects of miR-654-5p on CRC cell proliferation, migration, and invasion, respectively. Moreover, the mechanisms behind miR-654-5p regulates CRC progression were investigated. Results. Compared with normal cell line, miR-654-5p expression level was significantly suppressed in CRC cells. After overexpression of miR-654-5p, the malignancy behaviors of CRC cells including cell proliferation, migration, and invasion were remarkably decreased. Subsequently, we found hematopoietic cell-specific protein 1-associated protein X-1 (HAX-1) was a putative target for miR-654-5p. Rescue experiments showed overexpression of HAX-1 could partially reversed the effects of miR-654-4p on CRC cell events. Conclusion. miR-654-5p was reduced expression in CRC cells and could regulate CRC progression via targeting HAX-1

Effects of thickness and interlayer on optical properties of AlN films at room and high temperature

This paper investigates the systematic influence of thickness (136-412 nm) and temperature (300-860 K) on the refractive index and the band-edge of aluminum nitride (AlN) films. The combination of x-ray diffraction, spectroscopic ellipsometry (SE), and transmittance measurements at 300 K shows that the increase of epilayer thickness or the introduction of an AlN interlayer can improve the crystal quality. This is observed as an enlargement of the grain size, a reduction of the Urbach binding energy, and strain with a corresponding increase in the refractive index and bandgap. Moreover, the expected reduction in the bandgap and the increase of the refractive index are observed at elevated temperatures by SE. The temperature dependence of the refractive index at 632.8 nm and the bandgap were well understood and modeled using a quadratic nonlinear equation and the Bose-Einstein equation, respectively. This high-temperature phenomenological and quantitative analysis suggests that the reduction of the bandgap with temperature is more significant in thinner or noninterlayer films than expected due to the corresponding stronger electron-phonon interactions involved with larger Urbach binding energies. The thickest AlN film in this work (with an epilayer thickness of 412.9 nm and an interlayer thickness of 20.69 nm) has the smallest strength of the average electron-phonon coupling (407 meV) in the temperature range 300-860 K. On the other hand, the temperature-dependent variation of the refractive index in the transparent region is more rapid as the film thickness decreases owing to the high correlation between temperature-dependent bandgap and refractive index. These observations are critical when designing AlN-based device structures that can operate well above room temperature

Effects of thickness and interlayer on optical properties of AlN films at room and high temperature

This paper investigates the systematic influence of thickness (136-412 nm) and temperature (300-860 K) on the refractive index and the band-edge of aluminum nitride (AlN) films. The combination of x-ray diffraction, spectroscopic ellipsometry (SE), and transmittance measurements at 300 K shows that the increase of epilayer thickness or the introduction of an AlN interlayer can improve the crystal quality. This is observed as an enlargement of the grain size, a reduction of the Urbach binding energy, and strain with a corresponding increase in the refractive index and bandgap. Moreover, the expected reduction in the bandgap and the increase of the refractive index are observed at elevated temperatures by SE. The temperature dependence of the refractive index at 632.8 nm and the bandgap were well understood and modeled using a quadratic nonlinear equation and the Bose-Einstein equation, respectively. This high-temperature phenomenological and quantitative analysis suggests that the reduction of the bandgap with temperature is more significant in thinner or noninterlayer films than expected due to the corresponding stronger electron-phonon interactions involved with larger Urbach binding energies. The thickest AlN film in this work (with an epilayer thickness of 412.9 nm and an interlayer thickness of 20.69 nm) has the smallest strength of the average electron-phonon coupling (407 meV) in the temperature range 300-860 K. On the other hand, the temperature-dependent variation of the refractive index in the transparent region is more rapid as the film thickness decreases owing to the high correlation between temperature-dependent bandgap and refractive index. These observations are critical when designing AlN-based device structures that can operate well above room temperature