Unsupervised learning of generative topic saliency for person re-identification

(c) 2014. The copyright of this document resides with its authors. It may be distributed unchanged freely in print or electronic forms.© 2014. The copyright of this document resides with its authors. Existing approaches to person re-identification (re-id) are dominated by supervised learning based methods which focus on learning optimal similarity distance metrics. However, supervised learning based models require a large number of manually labelled pairs of person images across every pair of camera views. This thus limits their ability to scale to large camera networks. To overcome this problem, this paper proposes a novel unsupervised re-id modelling approach by exploring generative probabilistic topic modelling. Given abundant unlabelled data, our topic model learns to simultaneously both (1) discover localised person foreground appearance saliency (salient image patches) that are more informative for re-id matching, and (2) remove busy background clutters surrounding a person. Extensive experiments are carried out to demonstrate that the proposed model outperforms existing unsupervised learning re-id methods with significantly simplified model complexity. In the meantime, it still retains comparable re-id accuracy when compared to the state-of-the-art supervised re-id methods but without any need for pair-wise labelled training data

Room-Temperature Ferrimagnet with Frustrated Antiferroelectricity: Promising Candidate Toward Multiple State Memory

On the basis of first-principles calculations we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric (FE) state of BaFe12O19, reachable by applying an external electric field to the antiferroelectric (AFE) state, can be made stable at room temperature by appropriate element substitution or strain engineering. Thus M-type hexaferrite, as a new type of multiferoic with coexistence of antiferroelectricity and ferrimagnetism, provide a basis for studying the phenomenon of frustrated antiferroelectricity and realizing multiple state memory devices.Comment: supporting material available via email. arXiv admin note: text overlap with arXiv:1210.7116 by other author

Scalable solid-state quantum computation in decoherence-free subspaces with trapped ions

We propose a decoherence-free subspaces (DFS) scheme to realize scalable quantum computation with trapped ions. The spin-dependent Coulomb interaction is exploited, and the universal set of unconventional geometric quantum gates is achieved in encoded subspaces that are immune from decoherence by collective dephasing. The scalability of the scheme for the ion array system is demonstrated, either by an adiabatic way of switching on and off the interactions, or by a fast gate scheme with comprehensive DFS encoding and noise decoupling techniques.Comment: 4 pages, 1 figur

Observation of topological transition of Fermi surface from a spindle-torus to a torus in large bulk Rashba spin-split BiTeCl

The recently observed large Rashba-type spin splitting in the BiTeX (X = I, Br, Cl) bulk states due to the absence of inversion asymmetry and large charge polarity enables observation of the transition in Fermi surface topology from spindle-torus to torus with varying the carrier density. These BiTeX systems with high spin-orbit energy scales offer an ideal platform for achieving practical spintronic applications and realizing non-trivial phenomena such as topological superconductivity and Majorana fermions. Here we use Shubnikov-de Haas oscillations to investigate the electronic structure of the bulk conduction band of BiTeCl single crystals with different carrier densities. We observe the topological transition of the Fermi surface (FS) from a spindle-torus to a torus. The Landau level fan diagram reveals the expected non-trivial {\pi} Berry phase for both the inner and outer FSs. Angle-dependent oscillation measurements reveal three-dimensional FS topology when the Fermi level lies in the vicinity of the Dirac point. All the observations are consistent with large Rashba spin-orbit splitting in the bulk conduction band.Comment: 28 pages, supplementary informatio

GRB Precursors in the Fallback Collapsar Scenario

Precursor emission has been observed in a non-negligible fraction of gamma-ray bursts.The time gap between the precursor and the main burst extends in some case up to hundreds of seconds, such as in GRB041219A, GRB050820A and GRB060124. Both the origin of the precursor and the large value of the time gap are controversial. Here we investigate the maximum possible time gaps arising from the jet propagation inside the progenitor star, in models which assume that the precursor is produced by the jet bow shock or the cocoon breaking out of the progenitor. Due to the pressure drop ahead of the jet head after it reaches the stellar surface, a rarefaction wave propagates back into the jet at the sound speed, which re-accelerates the jet to a relativistic velocity and therefore limits the gap period to within about ten seconds. This scenario therefore cannot explain gaps which are hundreds of seconds long. Instead, we ascribe such long time gaps to the behavior of the central engine, and suggest a fallback collapsar scenario for these bursts. In this scenario, the precursor is produced by a weak jet formed during the initial core collapse, possibly related to MHD processes associated with a short-lived proto-neutron star, while the main burst is produced by a stronger jet fed by fallback accretion onto the black hole resulting from the collapse of the neutron star. We have examined the propagation times of the weak precursor jet through the stellar progenitor. We find that the initial weak jet can break out of the progenitor in a time less than ten seconds (a typical precursor duration) provided that it has a moderately high relativistic Lorentz factor \Gamma>=10 (abridged).Comment: 8 pages, accepted by ApJ, this version contains significantly expanded discussion and an additional figure, conclusions unchange

Controlling doping in graphene through a SiC substrate: A first-principles study

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming doping difficulty in graphene via substrate is reported.We find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and the conducting channel. Finally, we show that a similar idea can also be used to control magnetic properties, for example, induce a half-metallic state in the epitaxial graphene without magnetic impurity doping