3 research outputs found
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Material parameters in thick hydrogenated amorphous silicon radiation detectors
Transient photoconductivity measurements of basic material parameters: carrier mobility, mobility-lifetime product and the ionized dangling bind density of thick hydrogenated amorphous silicon detectors are presented. We found that only a fraction ({approximately}30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples done to relate the ionized dangling bond density and the ESR spin density also showed that this fraction is about 0.3. The time dependence of defect relaxation was found to be a stretched exponential. 5 refs., 3 figs., 1 tab
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Improved charge collection of the buried p-i-n a-Si:H radiation detectors
Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs
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Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors
We measured the equivalent noise charge of a-Si:H pin diodes (5 {approximately} 45{mu}m i-layer) with a pulse shaping time of 2.5 {mu}sec under reverse biases up to 30 V/{mu}m and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 {mu}m was measured to be the dominant component up to {approximately}100kHz for both saturation and linear regions. 15 refs., 7 figs