Material parameters in thick hydrogenated amorphous silicon radiation detectors

Transient photoconductivity measurements of basic material parameters: carrier mobility, mobility-lifetime product and the ionized dangling bind density of thick hydrogenated amorphous silicon detectors are presented. We found that only a fraction ({approximately}30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples done to relate the ionized dangling bond density and the ESR spin density also showed that this fraction is about 0.3. The time dependence of defect relaxation was found to be a stretched exponential. 5 refs., 3 figs., 1 tab

Improved charge collection of the buried p-i-n a-Si:H radiation detectors

Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors

We measured the equivalent noise charge of a-Si:H pin diodes (5 {approximately} 45{mu}m i-layer) with a pulse shaping time of 2.5 {mu}sec under reverse biases up to 30 V/{mu}m and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 {mu}m was measured to be the dominant component up to {approximately}100kHz for both saturation and linear regions. 15 refs., 7 figs

From Radcliffe-Brown to sociobiology: Some aspects of the rise of primatology within physical anthropology

The formation of the American Association of Physical Anthropologists some 50 years ago marked the official recognition of physical anthropology as a legitimate subfield of anthropology. Since then, with the growth of individual and institutional participation in the Association, and with the development of new research paradigms, a number of subspecializations have come to be accepted within the field. Perhaps none of these specializations, however, has grown as rapidly, or spectacularly, as has the subfield of primatology. This article details some of the rise of primatology as an accepted subdiscipline of physical anthropology and discusses the theoretical orientations which guided the first anthropological forays into the study of nonhuman primates.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/37609/1/1330560411_ftp.pd

Low energy positron diffraction from Cu(111): Importance of surface loss processes at large angles of incidence

Intensities of positrons specularly diffracted from Cu(111) were measured at the Brandeis positron beam facility and analyzed in the energy range 8eV40{degree}. 30 refs., 5 figs., 1 tab

Comment letters to the National Commission on Commission on Fraudulent Financial Reporting, 1987 (Treadway Commission) Vol. 2

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