574 research outputs found
Resonances in and
A partial wave analysis is presented of and
from a sample of 58M events in the BES II detector. The
is observed clearly in both sets of data, and parameters of the
Flatt\' e formula are determined accurately: (stat)
(syst) MeV/c, MeV/c, . The data also exhibit a strong peak
centred at MeV/c. It may be fitted with and a
dominant signal made from interfering with a smaller
component. There is evidence that the signal is
resonant, from interference with . There is also a state in with MeV/c and
MeV/c; spin 0 is preferred over spin 2. This state, , is
distinct from . The data contain a strong peak due to
. A shoulder on its upper side may be fitted by interference
between and .Comment: 17 pages, 6 figures, 1 table. Submitted to Phys. Lett.
First Measurements of eta_c Decaying into K^+K^-2(pi^+pi^-) and 3(pi^+pi^-)
The decays of eta_c to K^+K^-2(pi^+pi^-) and 3(pi^+pi^-) are observed for the
first time using a sample of 5.8X10^7 J/\psi events collected by the BESII
detector. The product branching fractions are determined to be B(J/\psi-->gamma
eta_c)*B(eta_c-->K^+K^-pi^+pi^-pi^+pi^-)=(1.21+-0.32+-
0.23)X10^{-4}, and (J/\psi-->gamma eta_c)*
B(eta_c-->pi^+pi^-pi^+pi^-pi^+pi^-)= (2.59+-0.32+-0.48)X10^{-4}. The upper
limit for eta_c-->phi pi^+pi^-pi^+pi^- is also obtained as B(J/\psi-->gamma
eta_c)*B(eta_c--> phi pi^+pi^-pi^+pi^-)< 6.03 X10^{-5} at the 90% confidence
level.Comment: 11 pages, 4 figure
Ge/Si interdiffusion in the GeSi dots and wetting layers
The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si-Ge mode redshifts and the intensity of the local Si-Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. (C) 2001 American Institute of Physics
Measurement of the Branching Fraction of J/psi --> pi+ pi- pi0
Using 58 million J/psi and 14 million psi' decays obtained by the BESII
experiment, the branching fraction of J/psi --> pi+ pi- pi0 is determined. The
result is (2.10+/-0.12)X10^{-2}, which is significantly higher than previous
measurements.Comment: 9 pages, 8 figures, RevTex
Search for K_S K_L in psi'' decays
K_S K_L from psi'' decays is searched for using the psi'' data collected by
BESII at BEPC, the upper limit of the branching fraction is determined to be
B(psi''--> K_S K_L) < 2.1\times 10^{-4} at 90% C. L. The measurement is
compared with the prediction of the S- and D-wave mixing model of the
charmonia, based on the measurements of the branching fractions of J/psi-->K_S
K_L and psi'-->K_S K_L.Comment: 5 pages, 1 figur
First observation of psi(2S)-->K_S K_L
The decay psi(2S)-->K_S K_L is observed for the first time using psi(2S) data
collected with the Beijing Spectrometer (BESII) at the Beijing Electron
Positron Collider (BEPC); the branching ratio is determined to be
B(psi(2S)-->K_S K_L) = (5.24\pm 0.47 \pm 0.48)\times 10^{-5}. Compared with
J/psi-->K_S K_L, the psi(2S) branching ratio is enhanced relative to the
prediction of the perturbative QCD ``12%'' rule. The result, together with the
branching ratios of psi(2S) decays to other pseudoscalar meson pairs
(\pi^+\pi^- and K^+K^-), is used to investigate the relative phase between the
three-gluon and the one-photon annihilation amplitudes of psi(2S) decays.Comment: 5 pages, 4 figures, 2 tables, submitted to Phys. Rev. Let
Study of psi(2S) decays to X J/psi
Using J/psi -> mu^+ mu^- decays from a sample of approximately 4 million
psi(2S) events collected with the BESI detector, the branching fractions of
psi(2S) -> eta J/psi, pi^0 pi^0 J/psi, and anything J/psi normalized to that of
psi(2S) -> pi^+ pi^- J/psi are measured. The results are B(psi(2S) -> eta
J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 0.098 \pm 0.005 \pm 0.010, B(psi(2S) ->
pi^0 pi^0 J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 0.570 \pm 0.009 \pm 0.026, and
B(psi(2S) -> anything J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 1.867 \pm 0.026
\pm 0.055.Comment: 13 pages, 8 figure
Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found. (C) 2002 American Institute of Physics
Bi-Functional Silica Nanoparticles Doped with Iron Oxide and CdTe Prepared by a Facile Method
Cadmium telluride (CdTe) and iron oxide nanoparticles doped silica nanospheres were prepared by a multistep method. Iron oxide nanoparticles were first coated with silica and then modified with amino group. Thereafter, CdTe nanoparticles were assembled on the particle surfaces by their strong interaction with amino group. Finally, an outer silica shell was deposited. The final products were characterized by X-ray powder diffraction, transmission electron microscopy, vibration sample magnetometer, photoluminescence spectra, Fourier transform infrared spectra (FT-IR), and fluorescent microscopy. The characterization results showed that the final nanomaterial possessed a saturation magnetization of about 5.8 emu g−1and an emission peak at 588 nm when the excitation wavelength fixed at 380 nm
Obervation of \chi_{cJ}--> omega omega decays
Decays of \chi_{c0,2}\ar\ww are observed for the first time using a sample
of events collected with the BESII detector. The
branching ratios are determined to be {\cal B}(\chi_{c0}\ar \ww)=(2.29\pm
0.58\pm 0.41)\times 10^{-3} and {\cal B}(\chi_{c2}\ar\ww)=(1.77\pm 0.47\pm
0.36)\times 10^{-3}, where the first errors are statistical and the second
systematic. The significances of the two signals are and
, respectively.Comment: 6 pages, 6 figure
- …