Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam

The surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation..

Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam

The surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation..

Study on Ablation Products of Zinc by Intense Pulsed Ion Beam Irradiation

As a kind of flash heat source, intense pulse ion beam can be used for material surface modification. The ablation effect has important influence on interaction between IPIB and material. Therefore, the understanding of ablation mechanism is of great significance to IPIB application..

Study of the intense pulsed electron beam energy spectrum from BIPPAB-450

Intense pulsed particle beams have been widely used and studied as an effective method for material surface modification in the past several decades. Beihang Intense Pulsed PArticle Beams 450 accelerator (BIPPAB-450) can produce Intense Pulsed Ion Beams (IPIB) and Electron Beams (IPEB) in two modes with different Magnetically Insulated Diodes (MID). For IPEB, the pulse duration, accelerating voltage, total beam current are 100ns, up to 450keV and 3kA, respectively..