578 research outputs found
Topological Imbert-Fedorov shift in Weyl semimetals
The Goos-H\"anchen (GH) shift and the Imbert-Fedorov (IF) shift are optical
phenomena which describe the longitudinal and transverse lateral shifts at the
reflection interface, respectively. Here, we report the GH and IF shifts in
Weyl semimetals (WSMs) - a promising material harboring low energy Weyl
fermions, a massless fermionic cousin of photons. Our results show that GH
shift in WSMs is valley-independent which is analogous to that discovered in a
2D relativistic material - graphene. However, the IF shift has never been
explored in non-optical systems, and here we show that it is valley-dependent.
Furthermore, we find that the IF shift actually originates from the topological
effect of the system. Experimentally, the topological IF shift can be utilized
to characterize the Weyl semimetals, design valleytronic devices of high
efficiency, and measure the Berry curvature
One-dimensional quantum channel in a graphene line defect
Using a tight-binding model, we study a line defect in graphene where a bulk
energy gap is opened by sublattice symmetry breaking. It is found that
sublattice symmetry breaking may induce many configurations that correspond to
different band spectra. In particular, a gapless state is observed for a
configuration which hold a mirror symmetry with respect to the line defect. We
find that this gapless state originates from the line defect and is independent
of the width of the graphene ribbon, the location of the line defect, and the
potentials in the edges of the ribbon. In particular, the gapless state can be
controlled by the gate voltage embedded below the line defect. Finally, this
result is supported with conductance calculations. This study shows how a
quantum channel could be constructed using a line defect, and how the quantum
channel can be controlled by tuning the gate voltage embedded below the line
defect.Comment: 8 pages, 10 figure
Disorder and metal-insulator transitions in Weyl semimetals
The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has
Weyl nodes in bulk excitations and Fermi arcs surface states. We study the
effects of disorder and localization in WSMs and find three exotic phase
transitions. (I) Two Weyl nodes near the Brillouin zone boundary can be
annihilated pairwise by disorder scattering, resulting in the opening of a
topologically nontrivial gap and a transition from a WSM to a three-dimensional
(3D) quantum anomalous Hall state. (II) When the two Weyl nodes are well
separated in momentum space, the emergent bulk extended states can give rise to
a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (III)
Two Weyl nodes can emerge near the zone center when an insulating gap closes
with increasing disorder, enabling a direct transition from a normal band
insulator to a WSM. We determine the phase diagram by numerically computing the
localization length and the Hall conductivity, and propose that the exotic
phase transitions can be realized on a photonic lattice.Comment: 7 pages with appendix, 6 figure
Disorder induced field effect transistor in bilayer and trilayer graphene
We propose use of disorder to produce a field effect transistor (FET) in
biased bilayer and trilayer graphene. Modulation of the bias voltage can
produce large variations in the conductance when the disorder's effects are
confined to only one of the graphene layers. This effect is based on the bias
voltage's ability to select which of the graphene layers carries current, and
is not tied to the presence of a gap in the density of states. In particular,
we demonstrate this effect in models of gapless ABA-stacked trilayer graphene,
gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.Comment: 21 pages, 7 figure
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