Study of the corrosion rate behavior of ion implanted Fe-based alloys

We report on some studies we have made of the time evolution of the corrosion behavior of ion implanted samples of pure iron, medium carbon steel, and 18-8 Cr-Ni stainless steel. Ti, Cr, Ni, Cu, Mo and Yb were implanted at mean ion energies near 100 keV and at doses up to 1 {times} 10{sup 17} cm{sup {minus}2} using a Mevva metal ion implantation facility. A novel feature of this experiment was the simultaneous implantation with several different implanted species. The implanted samples were immersed in sulfuric acid solution at 40{degrees}C and the corrosion monitored as a function of time. The loss in mass was accurately measured using atomic absorption spectroscopy. The functional dependence of the corrosion behavior was established for all samples. The cumulative mass loss Q is given as a function of time t by Q = At{sup N}, where A and N are parameters; thus the corrosion rate V is given by V = ANt{sup N-1}. A is dominated by the initial mass loss and N reflects the long-time corrosion behavior. The values of the parameters A and N were obtained by a least-squares regression for all the samples investigated. We determined that for the samples investigated here, N > 1 always and V increases with time throughout the experimental duration. In this paper we summarize the experimental results and discuss the effect of A and N on corrosion rate and the relationship between the corrosion current density and the parameters A and N. 11 refs., 4 figs

Vacuum Arc Ion Charge State Distributions

We have measured vacuum arc ion charge state spectra for a wide range of metallic cathode materials. The charge state distributions were measured using a time-of-flight diagnostic to monitor the energetic ion beam produced by a metal vapor vacuum arc ion source. We have obtained data for 48 metallic cathode elements: Li, C, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Ba, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Hf, Ta, W, Ir, Pt, Au, Pb, Bi, Th and U. The arc was operated in a pulsed mode with pulse length 0.25 msec; arc current was 100 A throughout. This array of elements extends and completes previous work by us. In this paper the measured distributions are cataloged and compared with our earlier results and with those of other workers. We also make some observations about the performance of the various elements as suitable vacuum arc cathode materials

Vacuum Arc Ion Charge State Distributions

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Plasma Immersion Surface Modification with Metal Ion Plasma

We describe here a novel technique for surface modification in which metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including' conventional' high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way. 22 refs., 4 figs

Novel Metal Ion Surface Modification Technique

We describe a method for applying metal ions to the near-surface region of solid materials. The added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate; the metal ion species can be the same as the substrate species or different from it, and more than one kind of metal species can be applied, either simultaneously or sequentially. Surface structures can be fabricated, including coatings and thin films of single metals, tailored alloys, or metallic multilayers, and they can be implanted or added onto the surface and ion beam mixed. We report two simple demonstrations of the method: implantation of yttrium into a silicon substrate at a mean energy of 70 keV and a dose of 1 {times} 10{sup 16} atoms/cm{sup 2}, and the formation of a titanium-yttrium multilayer structure with ion beam mixing to the substrate. 17 refs., 3 figs

Metal Vapor Vacuum Arc Ion Sources

We have developed a family of metal vapor vacuum are (MEVVA) high current metal ion sources. The sources were initially developed for the production of high current beams of metal ions for heavy ion synchrotron injection for basic nuclear physics research; more recently they have also been used for metal ion implantation. A number of different embodiments of the source have been developed for these specific applications. Presently the sources operate in a pulsed mode, with pulse width of order 1 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, and since the ions produced in the vacuum arc plasma are in general multiply ionized the ion energy is up to several hundred keV. Beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Nearly all of the solid metals of the Periodic Table have been use to produce beam. A number of novel features have been incorporated into the sources, including multiple cathodes and the ability to switch between up to 18 separate cathode materials simply and quickly, and a broad beam source version as well as miniature versions. here we review the source designs and their performance. 45 refs., 7 figs

[A] Broad-Beam, High Current, Metal Ion Implantation Facility

We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs

Versatile high current metal ion implantation facility

A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multi-cathode, broad beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion-charge state multiplicity, and with a beam current of up to several amperes peak pulsed and several tens of mA time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. 28 refs., 5 figs