Microscopic origin of local moments in a zinc-doped high-TcT_{c} superconductor

The formation of a local moment around a zinc impurity in the high-$T_{c}$ cuprate superconductors is studied within the framework of the bosonic resonating-valence-bond (RVB) description of the $t-J$ model. A topological origin of the local moment has been shown based on the phase string effect in the bosonic RVB theory. It is found that such an $S=1/2$ moment distributes near the zinc in a form of staggered magnetic moments at the copper sites. The corresponding magnetic properties, including NMR spin relaxation rate, uniform spin susceptibility, and dynamic spin susceptibility, etc., calculated based on the theory, are consistent with the experimental measurements. Our work suggests that the zinc substitution in the cuprates provide an important experimental evidence for the RVB nature of local physics in the original (zinc free) state.Comment: The topological reason of local moment formation is given. One figure is adde

Observation of momentum-confined in-gap impurity state in Ba0.6_{0.6}K0.4_{0.4}Fe2_2As2_2: evidence for anti-phase s±s_{\pm} pairing

We report the observation by angle-resolved photoemission spectroscopy of an impurity state located inside the superconducting gap of Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ and vanishing above the superconducting critical temperature, for which the spectral weight is confined in momentum space near the Fermi wave vector positions. We demonstrate, supported by theoretical simulations, that this in-gap state originates from weak non-magnetic scattering between bands with opposite sign of the superconducting gap phase. This weak scattering, likely due to off-plane Ba/K disorders, occurs mostly among neighboring Fermi surfaces, suggesting that the superconducting gap phase changes sign within holelike (and electronlike) bands. Our results impose severe restrictions on the models promoted to explain high-temperature superconductivity in these materials.Comment: 8 pages, 5 figures. Accepted for publication in Physical Review

Optical spectroscopy study of Nd(O,F)BiS2 single crystals

We present an optical spectroscopy study on F-substituted NdOBiS$_2$ superconducting single crystals grown using KCl/LiCl flux method. The measurement reveals a simple metallic response with a relatively low screened plasma edge near 5000 \cm. The plasma frequency is estimated to be 2.1 eV, which is much smaller than the value expected from the first-principles calculations for an electron doping level of x=0.5, but very close to the value based on a doping level of 7$\%$ of itinerant electrons per Bi site as determined by ARPES experiment. The energy scales of the interband transitions are also well reproduced by the first-principles calculations. The results suggest an absence of correlation effect in the compound, which essentially rules out the exotic pairing mechanism for superconductivity or scenario based on the strong electronic correlation effect. The study also reveals that the system is far from a CDW instability as being widely discussed for a doping level of x=0.5.Comment: 5 pages, 5 figure

Evolution of structural and electronic properties of highly mismatched InSb films

We have investigated the evolution of structural and electronic properties of highly mismatched InSb films, with thicknesses ranging from 0.1 to 1.5 μm. Atomic force microscopy, cross-sectional transmission electron microscopy, and high-resolution x-ray diffraction show that the 0.1 μm films are nearly fully relaxed and consist of partially coalesced islands, which apparently contain threading dislocations at their boundaries. As the film thickness increases beyond 0.2 μm, the island coalescence is complete and the residual strain is reduced. Although the epilayers have relaxed equally in the 〈110〉 in-plane directions, the epilayer rotation about an in-plane axis (epilayer tilt) is not equal in both 〈110〉 in-plane directions. Interestingly, the island-like surface features tend to be preferentially elongated along the axis of epilayer tilt. Furthermore, epilayer tilt which increases the substrate offcut (reverse tilt) is evident in the [110] direction. High-resolution transmission electron microscopy indicates that both pure-edge and 60° misfit dislocations contribute to the relaxation of strain. In addition, as the film thickness increases, the threading dislocation density decreases, while the corresponding room-temperature electron mobility increases. The other structural features, including the residual strain, and the surface and interface roughness, do not appear to impact the electron mobility in these InSb films. Together, these results suggest that free-carrier scattering from the threading dislocations is the primary room-temperature mobility-limiting mechanism in highly mismatched InSb films. Finally, we show quantitatively that free-carrier scattering from the lattice dilation associated with threading dislocations, rather than scattering from a depletion potential surrounding the dislocations, is the dominant factor limiting the electron mobility. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70332/2/JAPIAU-88-11-6276-1.pd