Two-component model for the chemical evolution of the Galactic disk

In the present paper, we introduce a two-component model of the Galactic disk to investigate its chemical evolution. The formation of the thick and thin disks occur in two main accretion episodes with both infall rates to be Gaussian. Both the pre-thin and post-thin scenarios for the formation of the Galactic disk are considered. The best-fitting is obtained through $\chi^2$-test between the models and the new observed metallicity distribution function of G dwarfs in the solar neighbourhood (Hou et al 1998). Our results show that post-thin disk scenario for the formation of the Galactic disk should be preferred. Still, other comparison between model predictions and observations are given.Comment: 23 pages, 7 figure

Mediating exchange bias by Verwey transition in CoO/Fe3O4 thin film

We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the exchange bias field is substantially enhanced because of a sharp increase in magnetocrystalline anisotropy constant from high-temperature cubic to lowtemperature monoclinic structure. Moreover, with respect to the Fe3O4 (40 nm)/MgO (001) thin film, the coercivity field of the CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) bilayer is greatly increased for all the temperature range, which would be due to the coupling between Co spins and Fe spins across the interface

Impurity scattering and Friedel oscillations in mono-layer black phosphorus

We study the effect of impurity scattering effect in black phosphorurene (BP) in this work. For single impurity, we calculate impurity induced local density of states (LDOS) in momentum space numerically based on tight-binding Hamiltonian. In real space, we calculate LDOS and Friedel oscillation analytically. LDOS shows strong anisotropy in BP. Many impurities in BP are investigated using $T$-matrix approximation when the density is low. Midgap states appear in band gap with peaks in DOS. The peaks of midgap states are dependent on impurity potential. For finite positive potential, the impurity tends to bind negative charge carriers and vise versa. The infinite impurity potential problem is related to chiral symmetry in BP

Production of the PP-Wave Excited BcB_c-States through the Z0Z^0 Boson Decays

In Ref.[7],we have dealt with the production of the two color-singlet $S$-wave $(c\bar{b})$-quarkonium states $B_c(|(c\bar{b})_{\bf 1}[^1S_0]>)$ and $B^*_c(|(c\bar{b})_{\bf 1}[^3S_1]>)$ through the $Z^0$ boson decays. As an important sequential work, we make a further discussion on the production of the more complicated $P$-wave excited $(c\bar{b})$-quarkonium states, i.e. $|(c\bar{b})_{\bf 1}[^1P_1]>$ and $|(c\bar{b})_{\bf 1}[^3P_J]>$ (with $J=(1,2,3)$). More over, we also calculate the channel with the two color-octet quarkonium states $|(c\bar{b})_{\bf 8}[^1S_0]g>$ and $|(c\bar{b})_{\bf 8}[^3S_1]g>$, whose contributions to the decay width maybe at the same order of magnitude as that of the color-singlet $P$-wave states according to the naive nonrelativistic quantum chromodynamics scaling rules. The $P$-wave states shall provide sizable contributions to the $B_c$ production, whose decay width is about 20% of the total decay width $\Gamma_{Z^0\to B_c}$. After summing up all the mentioned $(c\bar{b})$-quarkonium states' contributions, we obtain $\Gamma_{Z^0\to B_c} =235.9^{+352.8}_{-122.0}$ KeV, where the errors are caused by the main uncertainty sources.Comment: 8 pages, 5 figures and 2 tables. basic formulae in the appendix are cut off to match the published version, which can be found in v1. to be published in Eur.Phys.J.

Verwey transition in Fe3_{3}O4_{4} thin films: Influence of oxygen stoichiometry and substrate-induced microstructure

We have carried out a systematic experimental investigation to address the question why thin films of Fe$_3$O$_4$ (magnetite) generally have a very broad Verwey transition with lower transition temperatures as compared to the bulk. We observed using x-ray photoelectron spectroscopy, x-ray diffraction and resistivity measurements that the Verwey transition in thin films is drastically influenced not only by the oxygen stoichiometry but especially also by the substrate-induced microstructure. In particular, we found (1) that the transition temperature, the resistivity jump, and the conductivity gap of fully stoichiometric films greatly depends on the domain size, which increases gradually with increasing film thickness, (2) that the broadness of the transition scales with the width of the domain size distribution, and (3) that the hysteresis width is affected strongly by the presence of antiphase boundaries. Films grown on MgO (001) substrates showed the highest and sharpest transitions, with a 200 nm film having a T$_V$ of 122K, which is close to the bulk value. Films grown on substrates with large lattice constant mismatch revealed very broad transitions, and yet, all films show a transition with a hysteresis behavior, indicating that the transition is still first order rather than higher order.Comment: 9 pages, 12 figure