Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS2_2

Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron-phonon scattering. The intervalley electron-phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.Comment: 6 pages, 1 figur

Electron spin relaxation in bilayer graphene

Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh {\it et al.} [Phys. Rev. B {\bf 85}, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. ......(The remaining is cut due to the limit of space)Comment: 15 pages, 9 figures, PRB in pres

Topological superconductor with a large Chern number and a large bulk excitation gap in single layer graphene

We show that a two-dimensional topological superconductor (TSC) can be realized in a hybrid system with a conventional $s$-wave superconductor proximity-coupled to a quantum anomalous Hall (QAH) state from the Rashba and exchange effects in single layer graphene. With very low or even zero doping near the Dirac points, i.e., two inequivalent valleys, this TSC has a Chern number as large as four, which supports four Majorana edge modes. More importantly, we show that this TSC has a robust topologically nontrivial bulk excitation gap, which can be larger or even one order of magnitude larger than the proximity-induced superconducting gap. This unique property paves a way for the application of QAH insulators as seed materials to realize robust TSCs and Majorana modes.Comment: 10 pages, 5 figures, PRB in pres

Electron spin diffusion in monolayer MoS2_2

Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.Comment: 6 pages, 1 figur

Control of spin coherence in nn-type GaAs quantum wells using strain

We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be increased by two orders of magnitude to nanoseconds under right conditions. The efficiency of this strain manipulation of the spin dephasing time under different conditions such as temperature, electric field and electron density is investigated in detail.Comment: 4 pages, 5 figures in eps forma

Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots

We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt configuration. By explicitly including the electron-electron Coulomb interaction and the valley splitting induced by the interface scattering, we employ the exact-diagonalization method to obtain the energy spectra and the eigenstates. Then we calculate the relaxation rates with the Fermi golden rule. We find that the transition rates can be effectively tuned by varying the external magnetic field and the interdot distance. Especially in the vicinity of the anticrossing point, the transition rates show intriguing features. We also investigate the electric-field dependence of the transition rates, and find that the transition rates are almost independent of the electric field. This is of great importance in the spin manipulation since the lifetime remains almost the same during the change of the qubit configuration from $(1,1)$ to $(2,0)$ by the electric field.Comment: 9 pages, 8 figure

Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells

Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells is studied in both the traditional collinear statistics, where the energy spectra do not contain the spin-orbit coupling terms, and the helix statistics, where the spin-orbit couplings are included in the energy spectra. We show that there is only marginal difference between the spin relaxation times obtained from these two different statistics. We further show that with the cubic term of the Dresselhaus spin-orbit coupling included, the spin relaxation time along the (1,1,0) direction becomes finite, although it is still much longer than that along the other two perpendicular directions. The properties of the spin relaxation along this special direction under varies conditions are studied in detail.Comment: 9 pages, 4 figures. J. Appl. Phys. 99, 2006 (in press

Electron tunneling through a single magnetic barrier in HgTe topological insulator

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current can be transmitted from unpolarized states to totally spin polarized states. These features offer us and efficient way to control the topological edge state transport, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.Comment: 4 pages, 5 figure

Hole spin relaxation in bilayer WSe2_2

We investigate the hole spin relaxation due to the Rashba spin-orbit coupling induced by an external perpendicular electric field in bilayer WSe$_2$. The Rashba spin-orbit coupling coefficients in bilayer WSe$_2$ are constructed from the corresponding monolayer ones. In contrast to monolayer WSe$_2$, the out-of-plane component of the bilayer Rashba spin-orbit coupling acts as a Zeeman-like field with opposite directions but identical values in the two valleys. For in-plane spins, this Zeeman-like field, together with the intervalley hole-phonon scattering, opens an intervalley spin relaxation channel, which is found to dominate the in-plane spin relaxation in bilayer WSe$_2$ even at low temperature. For out-of-plane spins, this Zeeman-like field is superimposed by the identical Hartree-Fock effective magnetic fields in the two valleys, and hence different total effective magnetic fields between two valleys are obtained. Owing to the large difference of the total fields at large spin polarization, different out-of-plane spin relaxation times in the two valleys are obtained when the intervalley hole-phonon scattering is weak at low temperature and low hole density. This difference in the spin relaxation times can be suppressed by enhancing the intervalley hole-phonon scattering through increasing temperature or hole density. Moreover, at large spin polarization and low temperature, due to the weak intravalley hole-phonon scattering but relatively strong hole-hole Coulomb scattering, the fast spin precessions are found to result in a quasi hot-hole Fermi distribution characterized by an effective hot-hole temperature larger than the temperature, which also enhances the intervalley scattering. During this process, it is interesting to discover that the initially equal hole densities in the two valleys are broken in the temporal evolution, and a valley polarization is built up. ....Comment: 17 pages, 12 figure

Extraction of α\alpha From the CP Asymmetry in B^0/\bar B^0 --> pi+ pi- Decays

The influence of strong and electroweak penguin amplitudes in $B/ \bar B \rightarrow \pi^+\pi^-$ is investigated in connection with the determination of the unitarity triangle angle $\alpha$ of the CKM matrix. A relation between the observable asymmetry, the angle $\alpha$, and the penguin amplitude is established. A model calculation of the penguin amplitude shows that the CP asymmetry in $B^{0}\rightarrow \pi^{+}\pi^{-}$ decays is only mildly influenced by the penguin amplitudes. Experimental limits on pure penguin and penguin dominated processes are consistent with the model. This information also suggests in a rather model independent way that penguin amplitudes will not be a serious complicating factor in the determination of $\alpha$ from the $\pi^{+}\pi^{-}$ time dependent asymmetry.Comment: 15 pages, Latex, three figures available upon reques