3,276 research outputs found
A new solution approach to polynomial LPV system analysis and synthesis
Based on sum-of-squares (SOS) decomposition, we propose a new solution approach for polynomial LPV system analysis and control synthesis problems. Instead of solving matrix variables over a positive definite cone, the SOS approach tries to find a suitable decomposition to verify the positiveness of given polynomials. The complexity of the SOS-based numerical method is polynomial of the problem size. This approach also leads to more accurate solutions to LPV systems than most existing relaxation methods. Several examples have been used to demonstrate benefits of the SOS-based solution approach
Groups in Which Commutativity Is a Transitive Relation
AbstractWe investigate the structure of groups in which commutativity is a transitive relation on non-identity elements (CT-groups). A detailed study of locally finite, polycyclic, and torsion-free solvableCT-groups is carried out. Other topics include fixed-point-free groups of automorphisms of abelian torsion groups and their cohomology groups
Intersublevel Relaxation Properties of Self- Assembled InAs/GaAs Quantum Dot Heterostructures
Stabilizer Approximation III: Maximum Cut
We apply the stabilizer formalism to the Maximum Cut problem, and obtain a
new greedy construction heuristic. It turns out to be an elegant synthesis of
the edge-contraction and differencing edge-contraction approaches. Utilizing
the relation between the Maximum Cut problem and the Ising model, the
approximation ratio of the heuristic is easily found to be at least .
Moreover, numerical results show that the heuristic has very nice performance
for graphs with about 100 vertices.Comment: Proves that the approximation ratio is at least 1/2; greatly improves
the implementation of the algorithm. 14 pages, 2 figure
High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers
We investigate the high-temperature characteristics of InGaN/GaN multiple quantum well light-emitting devices with and without multiple quantum barriers (MQBs) in depth. The electroluminescence measurements were carried out over a temperature range from 200 to 380 K and an injection current level from 1 to 100 mA. Enhanced carrier confinement and stronger carrier localization in the active layer are achieved for the sample with MQBs. Furthermore, it is found that the external quantum efficiency of the sample possessing MQBs is higher than that of the sample with GaN barriers. The MQB structure improves the high-temperature operation of light-emitting devices
Some Effects of Ammonium Thiocyanate on Metabolic Processes in the Cotton Plant
Botany and Plant Patholog
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