Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diode property could be co-existent without any implementation of heterogeneous multiple stacks with ~1 μm thick LaOx NPs layer. Current–voltage (I–V) behavior of the LaOx NPs resistive switching (RS) device has shown an evolved current level with memristive behavior and additional rectification functionality with threshold voltage. The concurrent memristor and diode type selector characteristics were examined with electrical stimuli or spikes for the duration of 10–50 ms pulse biases. The pulsed spike increased current levels at a read voltage of +0.2 V sequentially along with ±7 V biases, which have emulated neuromorphic operation of long-term potentiation (LTP). This study can open a new application of rare-earth LaOx NPs as a component of neuromorphic synaptic device

Improvement of High Dynamic Range Capacitive Displacement Sensor by a Global Planarization

1

A technique for drift compensation of an area-varying capacitive displacement sensor for nano-metrology

AbstractArea-varying capacitive displacement sensors can overcome the short measurable range of widely-used gap-varying sensors. However, the output signal of the area-varying sensor may have an apparent drift. The drift in the signal is thought to be caused by several parameters, such as alignment error, thermal effect, external electric waves, etc. Since these parameters are difficult to control, so is reducing the drift. In this study, a model using two sets of electrodes in a single sample is proposed for reducing the drift while improving SNR (signal to noise ratio). The model is applied to an area variation type capacitive device to achieve drift and common noise reduction