The Impacts of Place Attachment on Environmentally Responsible Behavioral Intention and Satisfaction of Chinese Nature-Based Tourists

Increasing visits to protected areas in China have drawn public attention on the negative impacts on ecologically sensitive areas. Understanding potential determinants of the environmentally responsible behavioral intention of nature-based tourists has become a common focus in tourism studies. Scholars seek to explore potential determinants of visitors’ behavior, and the findings can be referenced by the managers of protected areas to formulate visitor management strategies. On the basis of a sample of 402 questionnaires collected in protected areas in South China, namely, Nanling National Forest Park and Dinghu Mountain National Nature Reserve, we explore the association between visitors’ place attachment and their satisfaction and environmentally responsible behavioral intention. The results show that place dependence and place identity are positively correlated with the satisfaction and environmentally responsible behavioral intention of visitors; thus, our results differ from those of previous studies on Western visitors. The lack of significant results regarding place social bonding revealed the shortcomings associated with visitor management in China’s protected areas. Chinese culture has a great influence on various findings in this study. All of the findings provide significant insights for management and policy-making regarding protected areas worldwide to accommodate the rising number of nature-based visitors to China. Keywords: place attachment; environmentally responsible behavioral intention; satisfaction; nature-based tourism; Chinese tourists; South Chin

Dynamics of stimulated emission and coherent backscattering of light from amplifying random medium

We investigated random scattering of light in a disorder gain medium of ZnO powder using the pump-probe technique. Using a probe beam at λ=390nm, the width (θ) of the coherent backscattering peak from the ZnO powder is measured to be ∼7.5⁰, thus the coherent scattering length l is approximately 1.2λ (θ=λ/2πl) which is close to the strong scattering regime. When a pump beam (λ=267nm) exceeds a certain excitation threshold, supernarrow emission peaks (bandwidth less than 1nm) emerged from the ZnO broad photoluminescence background. Concurrently, we also observed enhancement and sharpening of the coherent backscattering cone. Since light from the center of the backscatter cone experience the largest number of scatterings (i.e. longest gain length), this result is thus consistent with the random laser model that the supernarrow peak is due to amplification and stimulated emission of photon in the random gain medium. The time-resolved pump-probe measurement shows that the lifetime of the emission state above the lasing threshold is only a few picoseconds which is consistent with the interpretation that the supernarrow peaks are due to stimulated emission

ZnMgS-based solar-blind UV photodetectors grown by MBE

Molecular beam epitaxial growth of Zn_1-xMg_xS alloy thin films on GaP (1 0 0) substrates is reported. In situ reflection high energy electron diffraction (RHEED) studies show that the alloys can be grown with stable zinc-blende structure up to x around 30%. For x > 30%, a phase transition will occur at a critical thickness which is sensitively dependent on the composition x. Several Schottky barrier photodetectors using Zn_1-xMg_xS layer, with thickness less than the critical thickness, as active layer were fabricated. High ultra-violet responsivity and excellent visible rejection are achieved. The response curve of the Zn_0.43Mg_0.57S device offers a long wavelength cut-off at 295 nm and closely matches the erythemal action spectrum that describes human skin sensitivity to UV radiation. © 2001 Elsevier Science B.V

ZnS-based visible-blind UV detectors: Effects of isoelectronic traps

The aim of this study is to reveal the underlying cause of the gradual turn-on characteristic of low Te containing ZnSTe Schottky barrier photodiodes. The results of photoresponse studies on ZnS, ZnSSe and ZnSTe diodes indicate that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low Te containing ZnSTe Schottky barrier photodiodes. The results also reveal that the ZnSSe diode, having the advantage of being free of isoelectronic centers, is a more suitable choice for applications requiring high visible rejection power. It is demonstrated that highly UV sensitive responsivity with an abrupt long wavelength cutoff tailored to lie between 340-400 nm can be achieved in the ZnSSe diode system

Optical Precursors in Slow and Fast Light Media

We observe optical precursors generated from slow and fast light cold atomic media. Using constructive interference between sequenced precursors, we produce optical transient pulses with peak powers of about 9 times the input power. © OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011