Reentrant nu = 1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system

Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields

The spin relaxation in a 1D InAs quantum dot with the Rashba spin-orbit coupling under driving THz magnetic fields is investigated by developing the kinetic equation with the help of the Floquet-Markov theory, which is generalized to the system with the spin-orbit coupling, to include both the strong driving field and the electron-phonon scattering. The spin relaxation time can be effectively prolonged or shortened by the terahertz magnetic field depending on the frequency and strength of the terahertz magnetic field. The effect can be understood as the sideband-modulated spin-phonon scattering. This offers an additional way to manipulate the spin relaxation time.Comment: 8 pages, 1 figure, to be published in PR

Spin interference in silicon three-terminal one-dimensional rings

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.Comment: 8 pages, 5 figure

Radiation environment along the INTEGRAL orbit measured with the IREM monitor

The INTEGRAL Radiation Environment Monitor (IREM) is a payload supporting instrument on board the INTEGRAL satellite. The monitor continually measures electron and proton fluxes along the orbit and provides this information to the spacecraft on board data handler. The mission alert system broadcasts it to the payload instruments enabling them to react accordingly to the current radiation level. Additionally, the IREM conducts its autonomous research mapping the Earth radiation environment for the space weather program. Its scientific data are available for further analysis almost without delay.Comment: 5 pages, 7 figures, accepted for publication in A+A letter

Rashba spin splitting in biased semiconductor quantum wells

Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on the eight-band envelope function model. We find that at large wave vectors, RSS is both nonmonotonic and anisotropic as a function of in-plane wave vector, in contrast to the widely used linear and isotropic model. We derive an analytical expression for RSS, which can correctly reproduce such nonmonotonic behavior at large wave vectors. We also investigate numerically the dependence of RSS on the various band parameters and find that RSS increases with decreasing band gap and subband index, increasing valence band offset, external electric field, and well width. Our analytical expression for RSS provides a satisfactory explanation to all these features.Comment: 5 pages, 4 figures, author names corrected, submitted to Phys. Rev.

Sensitivity Analysis for the Manufacturing of Thermoplastic e-Preforms for Active Textile Reinforced Thermoplastic Composites

AbstractActive fibre-reinforced thermoplastic composites offer a high application potential for lightweight structures capable for series production. By the integration of functional components like material-embedded piezoceramic actuators or sensors the structural behaviour becomes actively controllable and manipulable. Currently, a wide application of such adaptive structures is mainly restricted by the lack of robust manufacture technologies. Therefore, these investigations are performed to develop and realise a novel robust and efficient manufacture process capable for series production. This process bases on a material and actuator adapted hot pressing technique. In this context, special regard is given to the sub process e-preforming. There a thermoplastic film is assembled with thermoplastic compatible piezoceramic modules and the necessary conductive paths. By the development of a special e-preforming unit and the corresponding parameter investigations an adapted manufacture of so called e-preforms can be realised