Tunneling between Dilute GaAs Hole Layers

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $\nu_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.Comment: Revised to include additional data, new discussion

Negative association in uniform forests and connected graphs

We consider three probability measures on subsets of edges of a given finite graph $G$, namely those which govern, respectively, a uniform forest, a uniform spanning tree, and a uniform connected subgraph. A conjecture concerning the negative association of two edges is reviewed for a uniform forest, and a related conjecture is posed for a uniform connected subgraph. The former conjecture is verified numerically for all graphs $G$ having eight or fewer vertices, or having nine vertices and no more than eighteen edges, using a certain computer algorithm which is summarised in this paper. Negative association is known already to be valid for a uniform spanning tree. The three cases of uniform forest, uniform spanning tree, and uniform connected subgraph are special cases of a more general conjecture arising from the random-cluster model of statistical mechanics.Comment: With minor correction

Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems

We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically affects the values of in-plane magnetic field at which the upper spin subband is depopulated. Most surprisingly, unlike 2D electron systems, the carrier-carrier interaction in 2D hole systems does not significantly enhance the spin susceptibility. We interpret our findings using a multipole expansion of the spin density matrix, and suggest that the suppression of the enhancement is related to the holes' band structure and effective spin j=3/2.Comment: 6 pages, 4 figures, substantially extended discussion of result

Quantum black holes from null expansion operators

Using a recently developed quantization of spherically symmetric gravity coupled to a scalar field, we give a construction of null expansion operators that allow a definition of general, fully dynamical quantum black holes. These operators capture the intuitive idea that classical black holes are defined by the presence of trapped surfaces, that is surfaces from which light cannot escape outward. They thus provide a mechanism for classifying quantum states of the system into those that describe quantum black holes and those that do not. We find that quantum horizons fluctuate, confirming long-held heuristic expectations. We also give explicit examples of quantum black hole states. The work sets a framework for addressing the puzzles of black hole physics in a fully quantized dynamical setting.Comment: 5 pages, version to appear in CQ

Electron spin orientation under in-plane optical excitation in GaAs quantum wells

We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.Comment: 10 pages, 4 figures, final versio

Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.Comment: 4 pages, 4 figures, Fig. 4 has been replaced from the previous version, minor changes in the tex

Negative differential Rashba effect in two-dimensional hole systems

We demonstrate experimentally and theoretically that two-dimensional (2D) heavy hole systems in single heterostructures exhibit a \emph{decrease} in spin-orbit interaction-induced spin splitting with an increase in perpendicular electric field. Using front and back gates, we measure the spin splitting as a function of applied electric field while keeping the density constant. Our results are in contrast to the more familiar case of 2D electrons where spin splitting increases with electric field.Comment: 3 pages, 3 figures. To appear in AP

Spin-orbit interaction and asymmetry effects on Kondo ridges at finite magnetic field

We study electron transport through a serial double quantum dot with Rashba spin-orbit interaction (SOI) and Zeeman field of amplitude B in presence of local Coulomb repulsion. The linear conductance as a function of a gate voltage Vg equally shifting the levels on both dots shows two B=0 Kondo ridges which are robust against SOI as time-reversal symmetry is preserved. Resulting from the crossing of a spin-up and a spin-down level at vanishing SOI two additional Kondo plateaus appear at finite B. They are not protected by symmetry and rapidly vanish if the SOI is turned on. Left-right asymmetric level-lead couplings and detuned on-site energies lead to a simultaneous breaking of left-right and bonding-anti-bonding state symmetry. In this case the finite-B Kondo ridges in the Vg-B plane are bent with respect to the Vg-axis. For the Kondo ridge to develop different level renormalizations must be compensated by adjusting B.Comment: 8 pages, 5 figures, revised version as publishe