Sol-gel Barium Titanate Nanohole Array as a Nonlinear Metasurface and a Photonic Crystal

The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows optical properties of a 2D photonic crystal and metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct soft nanoimprint lithography with sol-gel derived barium titanate enabling critical dimensions of 120 nm with aspect ratios of 5. The nanohole array exhibits a photonic bandgap in the infrared range when probed along the slab axis while lattice resonant states are observed in out-of-plane transmission configuration. The enhanced light-matter interaction from the resonant structure enables to increase the second-harmonic generation in the near-UV by a factor of 18 illustrating the potential in the flexible fabrication technique for barium titanate photonic devices

>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO3-on-SOI and potentially offers CMOS compatibility

Sol-Gel Barium Titanate Nanohole Array as a Nonlinear Metasurface and a Photonic Crystal

The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows the optical properties of a 2D photonic crystal and a metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct soft nanoimprint lithography with sol-gel derived barium titanate enabling critical dimensions of 120 nm with aspect ratios of five. The nanohole array exhibits a photonic bandgap in the infrared range when probed along the slab axis, while lattice resonant states are observed in out-of-plane transmission configuration. The enhanced light-matter interaction from the resonant structure enables to increase in the second-harmonic generation in the near-ultraviolet by a factor of 18 illustrating the potential in the flexible fabrication technique for barium titanate photonic devices.ISSN:1613-6810ISSN:1613-682

200 Gbit/s Barium Titanate Modulator Using Weakly Guided Plasmonic Modes

A plasmonic Mach-Zehnder modulator based on thin-film barium titanate is introduced demonstrating line rates up to 200 Gbit/s. The structure enables low insertion loss and high optical power stability without a DC bias during operation

100 Gbit/s NRZ Data Modulation in Plasmonic Racetrack Modulators on the Silicon Photonic Platform

Low power broadband plasmonic silicon-photonic racetrack modulators are introduced. 100 Gbit/s NRZ-OOK and 100 Gbit/s 4-PAM direct detection is demonstrated. The devices feature a bandwidth of 50 GHz, operate with 1.3 V p and are of interest because of the low on-chip loss characteristics

Measuring Dielectric and Electro-optic Responses of Thin Films using Plasmonic Devices

ISSN:1094-408

Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics

Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic–plasmonic mode propagation lengths of approximately 10 μm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.ISSN:1530-6984ISSN:1530-699