243 research outputs found
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Compositions for dark-field polymerization and method of using the same for imprint lithography processes
A composition is provided and a method of using the same to form a pattern on a substrate using imprint lithography employing dark-field polymerization is disclosed. The composition includes a polymerizable bisvinylether and an initiator that produces an acid in response to radiation.Board of Regents, University of Texas Syste
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Photoresist compositions comprising norbornene derivative polymers with acid labile groups
Provided herein are photoresist compositions for use particularly in 193 nm lithography. These compositions generally comprise a polymer of norbornene and a photo acid generator. The disclosed compositions provide transparency at wavelengths of approximately 190-200 nm, combined with high etch resistance. The polymers also provide hydrophilicity for good positive-tone development characteristics and high glass transition temperatures. Also disclosed is a process for microfabrication utilizing the claimed compositions. A further aspect of the invention is a plasticizer comprising 4,8-di-t-butyl-tricyclo(5.2.1.0.sup.2,6)decanedicarboxylate.Board of Regents, University of Texas Syste
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Branched siloxanes and methods for synthesis
The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithography, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.Board of Regents, University of Texas Syste
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Double Exposure Materials: Simulation Study of Feasibility
Double patterning and double exposure techniques have been proposed as possible methods for reducing half pitch resolution below k1=0.25. Both methods have the potential to reduce the theoretical lithographic half pitch to k1=0.125. Double patterning is a process-intensive method that requires multiple coat, develop, and etch steps to achieve the low k1 imaging. Double exposure processes have been proposed that do not require multiple coat, develop, or etch steps. Potentially, double exposure processes will have a lower cost of ownership that double patterning. However, double exposure materials have not yet been proven to work experimentally. Before applying significant effort to develop double exposure materials, their feasibility can be determined using rigorous simulation techniques. This work presents a feasibility study of four types of double exposure materials and their potential process windows
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Materials modeling and development for use in double-exposure lithography applications
The current optical photolithography technology is approaching the physical barrier to the minimum achievable feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double-exposure lithography has shown promise as a potential pathway that is attractive because it is much cheaper than double-patterning lithography and can be deployed on existing imaging tools. However, this technology is not possible without the development of new materials with nonlinear response to exposure dose. The performance of existing materials such as reversible contrast enhancement layers (rCELs), and theoretical materials such as intermediate state two-photon (ISTP) and optical threshold layer (OTL) materials in double-exposure applications have been investigated through computer simulation. All three materials yielded process windows in double-exposure mode. OTL materials showed the largest process window (depth of focus (DOF) 0.14 µm, exposure latitude (EL) 5.1%). ISTP materials had the next-largest process window (DOF 0.12 µm, EL 3.2%), followed by the rCEL (0.11 µm, 0.58%). This study is an analysis of the feasibility of using the materials in double-exposure mode
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Ordering block copolymers
A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.Board of Regents, University of Texas Syste
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An analysis of double exposure lithography options
The current optical photolithography technology is approaching the physical barrier to the minimum achievable feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double exposure lithography has shown promise as potential pathway that is attractive because it is much cheaper than double patterning lithography and it can be deployed on existing imaging tools. However, this technology is not possible without the development of new materials with nonlinear response to exposure dose. The performance of existing materials such as reversible contrast enhancement layers (rCELs) and theoretical materials such as intermediate state two-photon (ISTP) and optical threshold layer (OTL) materials in double exposure applications was investigated through computer simulation. All three materials yielded process windows in double exposure mode. OTL materials showed the largest process window (DOF 0.137 µm, EL 5.06 %). ISTP materials had the next largest process window (DOF 0.124 µm, EL 3.22 %) followed by the rCEL (0.105 µm, 0.58 %). This study is an analysis of the feasibility of using the materials in double exposure mode
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Method of creating a dispersion of a liquid on a substrate
The present invention includes a method of moving a liquid between a substrate extending in a first plane and a template extending in a second plane. More specifically, the method may include forming an oblique angle between the first plane and the second plane, reducing a distance between the substrate and the template such that the template is in contact with a portion of the liquid at a desired location, and creating a dispersion of the liquid away from the desired location.Board of Regents, University of Texas Syste
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Structure, stability, and reorganization of 0.5 L0 topography in block copolymer thin films
The structure, stability, and reorganization of lamella-forming block copolymer thin film surface topography (“islands” and “holes”) were studied under boundary conditions driving the formation of 0.5 L0 thick structures at short thermal annealing times. Self-consistent field theory predicts that the presence of one perfectly neutral surface renders 0.5 L0 topography thermodynamically stable relative to 1 L0 thick features, in agreement with previous experimental observations. The calculated through-film structures match cross-sectional scanning electron micrographs, collectively demonstrating the pinning of edge dislocations at the neutral surface. Remarkably, near-neutral surface compositions exhibit 0.5 L0 topography metastability upon extended thermal treatment, slowly transitioning to 1 L0 islands or holes as evidenced by optical and atomic force microscopy. Surface restructuring is rationalized by invoking commensurability effects imposed by slightly preferential surfaces. The results described herein clarify the impact of interfacial interactions on block copolymer self-assembly and solidify an understanding of 0.5 L0 topography, which is frequently used to determine neutral surface compositions of considerable importance to contemporary technological applications
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Anhydride copolymer top coats for orientation control of thin film block copolymers
The concepts described herein involve the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.Board of Regents, University of Texas Syste
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