Effects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts

Photoconductivity decay data have been obtained for NH_4F_((aq))-etched Si(111) and for air-oxidized Si(111) surfaces in contact with solutions of methanol, tetrahydrofuran (THF), or acetonitrile containing either ferrocene^(+/0) (Fc^(+/0)), [bis(pentamethylcyclopentadienyl)iron]^(+/0) (Me_(10)Fc^(+/0)), iodine (I_2), or cobaltocene^(+/0) (CoCp_2^(+/0)). Carrier decay measurements were made under both low-level and high-level injection conditions using a contactless rf photoconductivity decay apparatus. When in contact with electrolyte solutions having either very positive (Fc^(+/0), I_2/I^-) or relatively negative (CoCp_2^(+/0)) Nernstian redox potentials with respect to the conduction-band edge of Si, Si surfaces exhibited low effective surface recombination velocities. In contrast, surfaces that were exposed only to N_2(g) ambients or to electrolyte solutions that contained a mild oxidant (such as Me_(10)Fc^(+/0)) showed differing rf photoconductivity decay behavior depending on their different surface chemistry. Specifically, surfaces that possessed Si−OCH_3 bonds, produced by reaction of H-terminated Si with CH_3OH−Fc^(+/0), showed lower surface recombination velocities in contact with N_(2(g)) or in contact with CH_3OH−Me_(10)Fc^(+/0) solutions than did NH_4F_((aq))-etched, air-exposed H-terminated Si(111) surfaces in contact with the same ambients. Furthermore, the CH_3OH−Fc^(+/0)-treated surfaces showed lower surface recombination velocities than surfaces containing Si−I bonds, which were formed by the reaction of H-terminated Si surfaces with CH_3OH−I_2 or THF−I_2 solutions. These results can all be consistently explained through reference to the electrochemistry of Si/liquid contacts. In conjunction with prior measurements of the near-surface channel conductance for p^+−n−p^+ Si structures in contact with CH_3OH−Fc^(+/0) solutions, the data reveal that formation of an inversion layer (i.e., an accumulation of holes at the surface) on n-type Si, and not a reduced density of surface electrical trap sites, is primarily responsible for the long charge carrier lifetimes observed for Si surfaces in contact with CH_3OH or THF electrolytes containing I_2 or Fc^(+/0). Similarly, formation of an accumulation layer (i.e., an accumulation of electrons at the surface) consistently explains the low effective surface recombination velocity observed for the Si/CH_3OH−CoCp_2 and Si/CH_3CN−CoCp_2 contacts. Detailed digital simulations of the photoconductivity decay dynamics for semiconductors that are in conditions of inversion or depletion while in contact with redox-active electrolytes support these conclusions

Semiconductor photoelectrochemistry

This article discusses methods and experimental protocols in semiconductor electrochemistry. We first introduce the basic principles that govern the energetics and kinetics of charge flow at a semiconductor–liquid contact. The principal electrochemical techniques of photocurrent and photovoltage measurements used to obtain important interfacial energetic and kinetic quantities of such contacts are then described in detail. After this basic description of concepts and methods in semiconductor electrochemistry, we describe methods for characterizing the optical, electrical, and chemical properties of semiconductors through use of the electrochemical properties of semiconductor–liquid interfaces

Semiconductor Photoelectrochemistry

This article discusses methods and experimental protocols in semiconductor electrochemistry. We first discuss the basic principles that govern the energetics and kinetics of charge flow at a semiconductor‐liquid contact. The principal electrochemical techniques of photocurrent and photovoltage measurements used to obtain important interfacial energetic and kinetic quantities of such contacts are then described in detail. After this basic description of concepts and methods in semiconductor electrochemistry, we describe methods for characterizing the optical, electrical, and chemical properties of semiconductors through use of the electrochemical properties of semiconductor‐liquid interfaces

Electrochemical surface science twenty years later: Expeditions into the electrocatalysis of reactions at the core of artificial photosynthesis

Surface science research fixated on phenomena and processes that transpire at the electrode-electrolyte interface has been pursued in the past. A considerable proportion of the earlier work was on materials and reactions pertinent to the operation of small-molecule fuel cells. The experimental approach integrated a handful of surface-sensitive physical–analytical methods with traditional electrochemical techniques, all harbored in a single environment-controlled electrochemistry-surface science apparatus (EC-SSA); the catalyst samples were typically precious noble metals constituted of well-defined single-crystal surfaces. More recently, attention has been diverted from fuel-to-energy generation to its converse, (solar) energy-to-fuel transformation; e.g., instead of water synthesis (from hydrogen and oxygen) in fuel cells, water decomposition (to hydrogen and oxygen) in artificial photosynthesis. The rigorous surface-science protocols remain unchanged but the experimental capabilities have been expanded by the addition of several characterization techniques, either as EC-SSA components or as stand-alone instruments. The present manuscript describes results selected from on-going studies of earth-abundant electrocatalysts for the reactions that underpin artificial photosynthesis: nickel-molybdenum alloys for the hydrogen evolution reaction, calcium birnessite as a heterogeneous analogue for the oxygen-evolving complex in natural photosynthesis, and single-crystalline copper in relation to the carbon dioxide reduction reaction