Ultrahigh Piezoelectric Strains in PbZr1−xTixO3 single crystals with controlled Ti content close to the tricritical point

Intensive investigations of PbZr Ti O (PZT) materials with the ABO perovskite structure are connected with their extraordinary piezoelectric properties. Especially well known are PZT ceramics at the Morphotropic Phase Boundary (MPB), with x~0.48, whose applications are the most numerous among ferroelectrics. These piezoelectric properties are often obtained by doping with various ions at the B sites. Interestingly, we have found similar properties for undoped PZT single crystals with low Ti content, for which we have confirmed the existence of the tricritical point near x~0.06. For a PbZr Ti O crystal, we describe the ultrahigh strain, dielectric, optical and piezoelectric properties. We interpret the ultrahigh strain observed in the region of the antiferroelectric-ferroelectric transition as an inverse piezoelectric effect generated by the coexistence of domains of different symmetries. The complex domain coexistence was confirmed by determining optical indicatrix orientations in domains. The piezoelectric coefficient in this region reached an extremely high value of 5000 pm/V. We also verified that the properties of the PZT single crystals from the region near the tricritical point are incredibly susceptible to a slight deviation in the Ti content