4 research outputs found
High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition
Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs
<p>In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (<em>V<sub>th</sub></em>) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together. Using this structure, the <em>V<sub>th</sub></em> of AlGaN/GaN HEMTs can be systematically shifted from -3.92 V for a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.15 V for an enhancement-mode (E-mode) AlGaN/GaN HEMT. Besides, an optimum maximum peak transconductance of 235 mS/mm was achieved at the nano-channel width of 224 nm, which is almost two times larger than that of C-HEMT (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</p