Topological nodal states in circuit lattice

The search for artificial structure with tunable topological properties is an interesting research direction of today's topological physics. Here, we introduce a scheme to realize `topological semimetal states' with a three-dimensional periodic inductor-capacitor (LC) circuit lattice, where the topological nodal-line state and Weyl state can be achieved by tuning the parameters of inductors and capacitors. A tight-binding-like model is derived to analyze the topological properties of the LC circuit lattice. The key characters of the topological states, such as the drumhead-like surface bands for nodal-line state and the Fermi-arc-like surface bands for Weyl state, are found in these systems. We also show that the Weyl points are stable with the fabrication errors of electric devices.Comment: 4 figure

Transition-Metal Pentatelluride ZrTe5_5 and HfTe5_5: a Paradigm for Large-gap Quantum Spin Hall Insulators

Quantum spin Hall (QSH) insulators, a new class of quantum matters, can support topologically protected helical edge modes inside bulk insulating gap, which can lead to dissipationless transport. A major obstacle to reach wide application of QSH is the lack of suitable QSH compounds, which should be easily fabricated and has large size of bulk gap. Here we predict that single layer ZrTe$_5$ and HfTe$_5$ are the most promising candidates to reach the large gap QSH insulators with bulk direct (indirect) band gap as large as 0.4 eV (0.1 eV), and robust against external strains. The 3D crystals of these two materials are good layered compounds with very weak inter-layer bonding and are located near the phase boundary between weak and strong topological insulators, which pave a new way to future experimental studies on both QSH effect and topological phase transitions.Comment: 16 pages, 6 figure

The electronic structure of NaIrO3_3, Mott insulator or band insulator?

Motivated by the unveiled complexity of nonmagnetic insulating behavior in pentavalent post-perovskite NaIrO$_3$, we have studied its electronic structure and phase diagram in the plane of Coulomb repulsive interaction and spin-orbit coupling (SOC) by using the newly developed local density approximation plus Gutzwiller method. Our theoretical study proposes the metal-insulator transition can be generated by two different physical pictures: renormalized band insulator or Mott insulator regime. For the realistic material parameters in NaIrO$_3$, Coulomb interaction $U=2.0 (J=U/4)$ eV and SOC strength $\eta=0.33$ eV, it tends to favor the renormalized band insulator picture as revealed by our study.Comment: 5 pages, 4 figure

Electronic Structure and Linear Optical Properties of Sr2_{2}CuO2_{2}Cl2_{2} Studied from the First Principles Calculation

First-principles calculations with the full-potential linearized augmented plane-wave (FP-LAPW) method have been performed to investigate detailed electronic and linear optical properties of Sr$_{2}$CuO$_{2}$Cl$_{2}$, which is a classical low-dimensional antiferromagnet (AFM) charge transfer ({\it CT}) insulator. Within the local-spin-density approximation (LSDA) plus the on-site Coulomb interaction $U$ (LADA+$U$) added on Cu 3d orbitals, our calculated band gap and spin moments are well consistent with the experimental and other theoretical values. The energy dispersion relation agrees well with the angle resolved photoemission measurements. Its linear optical properties are calculated within the electric-dipole approximation. The absorption spectrum is found to agree well with the experimental result.Comment: 5 pages, 5 figure