The Investigation on Color Purity of Blue Organic Light-Emitting Diodes (BOLED) by Hole-Blocking Layer

Organic light-emitting diodes (OLEDs) with triple hole-blocking layer (THBL) structure, which consist of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,4′-bis(2,2′diphenyl vinil)-1,1′-biphenyl (DPVBi), and (4,4′-N,N′-dicarbazole)biphenyl (CBP), have been fabricated. Regardless of applied voltage variation, the luminous efficiency of the OLEDs with THBL structure was increased by 41% as compared with the dual hole-blocking layer (DHBL) structure. The CIE coordinates of (0.157, 0.111) of device with THBL structure are close to pure blue emission than that of other devices of DHBL. There is a coordinate with the slight shift of ±Δx,y = (0.001, 0.008) for the device with THBL structure during the applied voltage of 6–9 V. The results indicate that the excitons can be effectively confined in the emitting layer of device, leading to an enhancement of luminance efficiency and more stable coordinate

Phylogenomic analyses provide insights into primate evolution

Comparative analysis of primate genomes within a phylogenetic context is essential for understanding the evolution of human genetic architecture and primate diversity. We present such a study of 50 primate species spanning 38 genera and 14 families, including 27 genomes first reported here, with many from previously less well represented groups, the New World monkeys and the Strepsirrhini. Our analyses reveal heterogeneous rates of genomic rearrangement and gene evolution across primate lineages. Thousands of genes under positive selection in different lineages play roles in the nervous, skeletal, and digestive systems and may have contributed to primate innovations and adaptations. Our study reveals that many key genomic innovations occurred in the Simiiformes ancestral node and may have had an impact on the adaptive radiation of the Simiiformes and human evolution

Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness

Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002) to (101) as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (VGS-VT) and the higher drain/source voltage VDS, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length L was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length L is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned

Q-Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Q-factor is a reasonable index to investigate the integrity of circuits or devices in terms of their energy or charge storage capabilities. We use this figure of merit to explore the deposition quality of nano-node high-k gate dielectrics by decoupled-plasma nitridation at different temperatures with a fixed nitrogen concentration. This is very important in radio-frequency applications. From the point of view of the Q-factor, the device treated at a higher annealing temperature clearly demonstrates a better Q-factor value. Another interesting observation is the appearance of two troughs in the Q-VGS characteristics, which are strongly related to either the series parasitic capacitance, the tunneling effect, or both

Thickness Study of Ga₂O₃ Barrier Layer in p-Si/n-MgZnO:Er/Ga₂O₃/ZnO:In Diode

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C with aqueous solutions containing magnesium nitrate, zinc acetate, erbium acetate, gallium nitrate, and indium nitrate precursors. The effects of Ga2O3 layer thickness on the diode properties were investigated. For the deposited films, a combined tiny hexagonal slices and small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes were formed after In and Ag deposition on the back side and top side, respectively. The current-voltage characteristics and luminescence spectra are studied. With the increasing of Ga2O3 thickness, the diode forward bias resistance increases while the reverse biased dark current shows the decrease-increase characters. The Er ion corresponded green light emission was characterized for the diode under reverse biased breakdown condition. The increased luminescent intensity with low turn-on current behaviors was characterized by the diode with a Ga2O3 thickness of 4.9 nm. With the diode electrical and luminescence analysis, the effect of the Ga2O3 barrier layer on the diode was discussed. The Ga2O3 barrier layer improves performance for rare earth-related light-emitting devices

Investigating the Properties of CIS Absorber Layer by Using the Spray Coating Method

The CuInSe2 absorber layers were deposited on Mo/glass substrates by using the spray coating method (SCM). At first, the CIS powder was ground into nanoscale particles; then the 6 wt% CIS particles were dispersed into isopropyl alcohol (IPA) to get the solution for SCM. 0.05 mL CIS solution was sprayed on the 2 cm × 1 cm Mo/glass substrates, and then the CIS solution films were annealed in a selenization furnace under different parameters. At first, the extra 0.2 g Se was put in the furnace, the selenization time was 5 min, and the selenization temperature was changed from 450°C to 600°C. After finding the better selenization temperature of 550°C and setting the selenization time at 5 min, the selenization process was set at 550°C and the extra Se content was changed from 0 g to 0.6 g. The influences of the selenization temperature and extra Se content on the surface and cross-section morphologies, crystallization, hall mobility, and carrier concentration and resistivity of the CIS absorber layers were well investigated in this study

Low-Frequency Vibration Sensor with Dual-Fiber Fabry–Perot Interferometer Using a Low-Coherence LED

In this paper, we propose a dual-fiberoptic Fabry–Perot interferometer (FFPI) sensing system integrated with a low-cost and low-coherence light-emitting diode (LED) as a light source to detect dynamic vibration caused by acoustic waves with a cut-off frequency of 200 Hz. When the acoustic signals are applied, the sensing FFPI on a Styrofoam sheet provides the function of partially transforming the longitudinal energy as the transverse energy generates a phase shift in the sensing FFPI cavity. The light reflected from the sensor is demodulated by the reference FFPI to extract the measurand. The low-power (sub-nW) optical signals are transferred into electrical signals, processed by a designed optical receiver, and recorded for data analysis

Low-Frequency Vibration Sensor with Dual-Fiber Fabry–Perot Interferometer Using a Low-Coherence LED

In this paper, we propose a dual-fiberoptic Fabry–Perot interferometer (FFPI) sensing system integrated with a low-cost and low-coherence light-emitting diode (LED) as a light source to detect dynamic vibration caused by acoustic waves with a cut-off frequency of 200 Hz. When the acoustic signals are applied, the sensing FFPI on a Styrofoam sheet provides the function of partially transforming the longitudinal energy as the transverse energy generates a phase shift in the sensing FFPI cavity. The light reflected from the sensor is demodulated by the reference FFPI to extract the measurand. The low-power (sub-nW) optical signals are transferred into electrical signals, processed by a designed optical receiver, and recorded for data analysis