Diffusion length measurements using the scanning electron microscope

A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique

Behavior of hydrogen in alpha-iron at lower temperatures

Evidence is presented that the low temperature anomalies in the hydrogen occlusive behavior of alpha iron can be explained by means of a molecular occlusion theory. This theory proposes that the stable state of the absorbed hydrogen changes from atomic at high temperatures to molecular as the temperature is lowered below a critical value. Theories proposing to explain the anomalous behavior as being due to the capture, at lower temperatures, of hydrogen in traps are shown to be unacceptable

The effect of Ta2O5 on the interaction between silicon and its contact metallization

Evidence is presented showing that the presence of the commonly used antireflection coating material, Ta2O5, on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying silicon. The Ta2O5 layer is shown to suppress both the generation and the annihilation of vacancies at the metal free surface which are necessary to support metal-silicon interactions. It is also shown that the mechanical condition of the free metal surface has a significant effect on the passivating ability of the Ta2O5 layer

The effect of internal stresses on solar cell efficiency

Diffusion induced stresses in silicon are shown to result in large localized changes in the minority carrier mobility which in turn have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses appear to be much more effective in altering cell performance. While most stress related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation

Vacancy-Vacancy Interaction in Copper

The binding energy of two vacancies in a static lattice as a function of their separation and the positions of their displaced neighboring atoms has been calculated using a Morse potential function model for copper. It was found that two vacancies attract one another at separation less than about 7 A. At separations greater than 7 A the vacancies do not interact appreciably. The most stable separation was found to be the first nearest- neighbor separation or the divacancy configuration, for which the binding energy was found to be 0.64 ev. Based on these calculations, it is shown that third-stage annealing in irradiated copper may be accounted for by divacancy migration. The role of the divacancy in copper self-diffusion is also explained

The effect of minority carrier mobility variations on the performance of high voltage silicon solar cells

A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically

The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface

Application of the SEM to the measurement of solar cell parameters

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths

Ensuring Resilience: Efforts to Retrofit Soft-Story Housing in California

The intention of this study was to determine what soft story housing retrofit ordinances have been offered by local governments in the State of California since the 1989 Loma Prieta earthquake, and to analyze the components and provisions therein to determine possible trends and best practices