Non-Abelian inverse Anderson transitions

Inverse Anderson transitions, where the flat-band localization is destroyed by disorder, have been wildly investigated in quantum and classical systems in the presence of Abelian gauge fields. Here, we report the first investigation on inverse Anderson transitions in the system with non-Abelian gauge fields. It is found that pseudospin-dependent localized and delocalized eigenstates coexist in the disordered non-Abelian Aharonov-Bohm cage, making inverse Anderson transitions depend on the relative phase of two internal pseudospins. Such an exotic phenomenon induced by the interplay between non-Abelian gauge fields and disorder has no Abelian analogy. Furthermore, we theoretically design and experimentally fabricate nonAbelian Aharonov-Bohm topolectrical circuits to observe the non-Abelian inverse Anderson transition. Through the direct measurements of frequency-dependent impedance responses and voltage dynamics, the pseudospin-dependent non-Abelian inverse Anderson transitions are observed. Our results establish the connection between inverse Anderson transitions and non-Abelian gauge fields, and thus comprise a new insight on the fundamental aspects of localization in disordered non-Abelian flat-band systems

Observation of inverse Anderson transitions in Aharonov-Bohm topolectrical circuits

It is well known that Anderson transition is a disorder-induced metal-insulator transition.Contrary to this conventional wisdom, some investigations have shown that disorders could destroy the phase coherence of localized modes in flatbands, making the localized states melt into extended states. This phenomenon is called the inverse Anderson transition. While, to date, the experimental observation of inverse Anderson transitions is still lacking. In this work, we report the implementation of inverse Anderson transitions based on Aharonov-Bohm topolectrical circuits. Different types of disorders, including symmetric-correlated, antisymmetric-correlated and uncorrelated disorders, can be easily implemented in Aharonov-Bohm circuits by engineering the spatial distribution of ground settings. Through the direct measurements of frequency-dependent impedance responses and time-domain voltage dynamics, the inverse Anderson transitions induced by antisymmetric-correlated disorders are clearly observed. Moreover, the flat bands and associated spatial localizations are also fulfilled in clean Aharonov-Bohm circuits or Aharonov-Bohm circuits sustaining symmetric-correlated and uncorrelated disorders, respectively. Our proposal provides a flexible platform to investigate the interplay between the geometric localization and Anderson localization, and could have potential applications in electronic signal control.Comment: 12 pages, 4 figure

Exploring topological phase transition andWeyl physics in five dimensions with electric circuits

Weyl semimetals are phases of matter with gapless electronic excitations that are protected by topology and symmetry. Their properties depend on the dimensions of the systems. It has been theoretically demonstrated that five-dimensional (5D) Weyl semimetals emerge as novel phases during the topological phase transition in analogy to the three-dimensional case. However, experimental observation of such a phenomenon remains a great challenge because the tunable 5D system is extremely hard to construct in real space. Here, we construct 5D electric circuit platforms in fully real space and experimentally observe topological phase transitions in five dimensions. Not only are Yang monopoles and linked Weyl surfaces observed experimentally, but various phase transitions in five dimensions are also proved, such as the phase transitions from a normal insulator to a Hopf link of twoWeyl surfaces and then to a 5D topological insulator. The demonstrated topological phase transitions in five dimensions leverage the concept of higher-dimensional Weyl physics to control electrical signals in the engineered circuits