Competing periodicities in fractionally filled one-dimensional bands

We present a variable temperature Scanning Tunneling Microscopy and Spectroscopy (STM and STS) study of the Si(553)-Au atomic chain reconstruction. This quasi one-dimensional (1D) system undergoes at least two charge density wave (CDW) transitions at low temperature, which can be attributed to electronic instabilities in the fractionally-filled 1D bands of the high-symmetry phase. Upon cooling, Si(553)-Au first undergoes a single-band Peierls distortion, resulting in period doubling along the imaged chains. This Peierls state is ultimately overcome by a competing tripleperiod CDW, which in turn is accompanied by a x2 periodicity in between the chains. These locked-in periodicities indicate small charge transfer between the nearly half-filled and quarter-filled 1D bands. The presence and the mobility of atomic scale dislocations in the x3 CDW state indicates the possibility of manipulating phase solitons carrying a (spin,charge) of (1/2,+-e/3) or (0,+-2e/3).Comment: submitted, accepted for publication in Phys. Rev. Let

Theory of the "honeycomb chain-channel" reconstruction of Si(111)3x1

First-principles electronic-structure methods are used to study a structural model for Ag/Si(111)3x1 recently proposed on the basis of transmission electron diffraction data. The fully relaxed geometry for this model is far more energetically favorable than any previously proposed, partly due to the unusual formation of a Si double bond in the surface layer. The calculated electronic properties of this model are in complete agreement with data from angle-resolved photoemission and scanning tunneling microscopy.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Lett (the ugly postscript error on page 4 has now been repaired

A Field Effect Transitor based on the Mott Transition in a Molecular Layer

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.Comment: Revtex 11pages, Figures available upon reques

Formation of atom wires on vicinal silicon

The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a chemical potential analysis involving more than thirty candidate structures and considering various fabrication procedures, it is concluded that pseudomorphic growth on stepped Si(112), both under equilibrium and non-equilibrium conditions, must favor formation of Ga zig-zag chains rather than linear atom chains. The surface is non-metallic and presents quasi-one dimensional character in the lowest conduction band.Comment: submitte

Ga-induced atom wire formation and passivation of stepped Si(112)

We present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford Backscattering Spectrometry (RBS) and Density Functional Theory (DFT) calculations. A new structural model of the Si(112)6 x 1-Ga surface is inferred. It consists of Ga zig-zag chains that are intersected by quasi-periodic vacancy lines or misfit dislocations. The experimentally observed meandering of the vacancy lines is caused by the co-existence of competing 6 x 1 and 5 x 1 unit cells and by the orientational disorder of symmetry breaking Si-Ga dimers inside the vacancy lines. The Ga atoms are fully coordinated, and the surface is chemically passivated. STS data reveal a semiconducting surface and show excellent agreement with calculated Local Density of States (LDOS) and STS curves. The energy gain obtained by fully passivating the surface calls the idea of step-edge decoration as a viable growth method toward 1D metallic structures into question.Comment: Submitted, 13 pages, accepted in Phys. Rev. B, notational change in Fig.

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.Comment: 4 pages, 3 figure

Spin-triplet superconductivity in repulsive Hubbard models with disconnected Fermi surfaces: a case study on triangular and honeycomb lattices

We propose that spin-fluctuation-mediated spin-triplet superconductivity may be realized in repulsive Hubbard models with disconnected Fermi surfaces. The idea is confirmed for Hubbard models on triangular (dilute band filling) and honeycomb (near half-filling) lattices using fluctuation exchange approximation, where triplet pairing order parameter with f-wave symmetry is obtained. Possible relevance to real superconductors is suggested.Comment: 5 pages, 6 figures, RevTeX, uses epsf.sty and multicol.st