72,750 research outputs found

    Stability of spikes in the shadow Gierer-Meinhardt system with Robin boundary conditions

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    We consider the shadow system of the Gierer-Meinhardt system in a smooth bounded domain RN,At=2A−A+,x, t>0, ||t=−||+Ardx, t>0 with the Robin boundary condition +aAA=0, x, where aA>0, the reaction rates (p,q,r,s) satisfy 1<p<()+, q>0, r>0, s0, 1<<+, the diffusion constant is chosen such that 1, and the time relaxation constant is such that 0. We rigorously prove the following results on the stability of one-spike solutions: (i) If r=2 and 1<p<1+4/N or if r=p+1 and 1<p<, then for aA>1 and sufficiently small the interior spike is stable. (ii) For N=1 if r=2 and 1<p3 or if r=p+1 and 1<p<, then for 0<aA<1 the near-boundary spike is stable. (iii) For N=1 if 3<p<5 and r=2, then there exist a0(0,1) and µ0>1 such that for a(a0,1) and µ=2q/(s+1)(p−1)(1,µ0) the near-boundary spike solution is unstable. This instability is not present for the Neumann boundary condition but only arises for the Robin boundary condition. Furthermore, we show that the corresponding eigenvalue is of order O(1) as 0. ©2007 American Institute of Physic

    Valley-kink in Bilayer Graphene at ν=0\nu=0: A Charge Density Signature for Quantum Hall Ferromagnetism

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    We investigate interaction-induced valley domain walls in bilayer graphene in the ν=0\nu=0 quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a double-gated suspended sample, where the electric field changes sign across a line in the middle. The non-interacting energy spectrum of the ground state is characterized by a sharp domain wall between two valley-polarized regions. Using the Hartree-Fock approximation, we find that the Coulomb interaction opens a gap between the two lowest-lying states near the Fermi level, yielding a smooth domain wall with a kink configuration in the valley index. Our results suggest the possibility to visualize the domain wall via measuring the charge density difference between the two graphene layers, which we find exhibits a characteristic pattern. The width of the kink and the resulting pattern can be tuned by the interplay between the magnetic field and gate electric fields

    Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

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    We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulators, and of the two-dimensional strongly-correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.Comment: 7 pages, 6 figures, some typos correcte

    The ordered K-theory of a full extension

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    Let A be a C*-algebra with real rank zero which has the stable weak cancellation property. Let I be an ideal of A such that I is stable and satisfies the corona factorization property. We prove that 0->I->A->A/I->0 is a full extension if and only if the extension is stenotic and K-lexicographic. As an immediate application, we extend the classification result for graph C*-algebras obtained by Tomforde and the first named author to the general non-unital case. In combination with recent results by Katsura, Tomforde, West and the first author, our result may also be used to give a purely K-theoretical description of when an essential extension of two simple and stable graph C*-algebras is again a graph C*-algebra.Comment: Version IV: No changes to the text. We only report that Theorem 4.9 is not correct as stated. See arXiv:1505.05951 for more details. Since Theorem 4.9 is an application to the main results of the paper, the main results of this paper are not affected by the error. Version III comments: Some typos and errors corrected. Some references adde

    Relative entropy of entanglement for certain multipartite mixed states

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    We prove conjectures on the relative entropy of entanglement (REE) for two families of multipartite qubit states. Thus, analytic expressions of REE for these families of states can be given. The first family of states are composed of mixture of some permutation-invariant multi-qubit states. The results generalized to multi-qudit states are also shown to hold. The second family of states contain D\"ur's bound entangled states. Along the way, we have discussed the relation of REE to two other measures: robustness of entanglement and geometric measure of entanglement, slightly extending previous results.Comment: Single column, 22 pages, 9 figures, comments welcom

    Probing the plateau-insulator quantum phase transition in the quantum Hall regime

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    We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance \rho_{xx} follow an exponential law and we extract a critical exponent \kappa= .55 \pm .05 which is slightly different from the established value \kappa = .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance \sigma_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.Comment: 4 pages, 4 figures (.eps
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