Dynamics of spin-flip photon-assisted tunneling

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective “spin-flip tunneling” energy, which is found to be three orders of magnitude smaller than the regular spin-conserving tunneling energy. We also measure the relaxation and dephasing times of a qubit formed out of two two-electron states with different spin and charge configurations.QN/Quantum NanoscienceApplied Science

Photon- and phonon-assisted tunneling in the three-dimensional charge stability diagram of a triple quantum dot array

We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions potentially contribute to leakage of qubits defined in this system. A detailed understanding of these transitions is important as they become more abundant and complex to analyze as quantum dot arrays are scaled up.QN/Quantum NanoscienceApplied Science

Quantum Simulation of Antiferromagnetic Heisenberg Chain with Gate-Defined Quantum Dots

Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers. To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required. Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array. We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met. Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian. Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlet-triplet measurements on each nearest-neighbor pair and the correlations therein. The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays.Electrical Engineering, Mathematics and Computer ScienceQuTechQCD/Vandersypen LabQN/Vandersypen La

Efficient Orthogonal Control of Tunnel Couplings in a Quantum Dot Array

Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and interdot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all interdot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.QCD/Vandersypen LabQuTechQN/Vandersypen La

Automated tuning of inter-dot tunnel coupling in double quantum dots

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.QuTechQCD/Vandersypen LabQN/Vandersypen La

InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of ‘‘bias cooling.’’ Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.Kavli Institute of Nanoscience DelftApplied Science

Nonlinear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays

We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs heterostructures by means of split gates. We demonstrate a nonlinear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to heterostructure. These phenomena are important in the context of information processing since the tunability and dot-dependence of the Zeeman splitting allow for a selective manipulation of spins. We show that spin-orbit effects related to the GaAs band structure quantitatively explain the observed magnitude of the nonlinear dependence of the Zeeman splitting. Furthermore, spin-orbit effects result in a dependence of the Zeeman splitting on predominantly the out-of-plane quantum dot confinement energy. We also show that the variations of the confinement energy due to charge disorder in the heterostructure may explain the dependence of Zeeman splitting on the dot position. This position may be varied by changing the gate voltages, which leads to an electrically tunable Zeeman splitting.QCD/Vandersypen LabQuTechQN/Nazarov Grou

InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of ‘‘bias cooling.’’ Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.Kavli Institute of Nanoscience DelftApplied Science

Auger-spectroscopy in quantum Hall edge channels and the missing energy problem

Quantum Hall edge channels offer an efficient and controllable platform to study quantum transport in one dimension. Such channels are a prospective tool for the efficient transfer of quantum information at the nanoscale, and play a vital role in exposing intriguing physics. Electric current along the edge carries energy and heat leading to inelastic scattering, which may impede coherent transport. Several experiments attempting to probe the concomitant energy redistribution along the edge reported energy loss via unknown mechanisms of inelastic scattering. Here we employ quantum dots to inject and extract electrons at specific energies, to spectrally analyse inelastic scattering inside quantum Hall edge channels. We show that the missing energy puzzle could be untangled by incorporating non-local Auger-like processes, in which energy is redistributed between spatially separate parts of the sample. Our theoretical analysis, accounting for the experimental results, challenges common-wisdom analyses which ignore such non-local decay channels.QCD/Vandersypen LabQuTec

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present a detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional H2-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.QCD/Vandersypen LabQuTechQN/Vandersypen La