Structural and electronic properties of Al nanowires: an ab initio pseudopotential study

The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles of $140^o$ and $60^o$. The evolution of electronic structures of the Al chain as a function of structural phase transition has been investigated. The relationship between electronic structure and geometric stability is also discussed. The 2p bands in the Al nanowire are shown to play a critical role in its stability. The effects of density functionals (GGA and LDA) on cohesive energy and bond length of Al nanostructures (dimmer, chains, and monolayers) are also examined. The link between low dimensional 0D structure (dimmer) to high dimensional 3D bulk Al is estimated. An example of optimized tip-suspended finite atomic chain is presented to bridge the gap between hypothetical infinite chains and experimental finite chains.Comment: 11 pages, 5 figure

The Color Octet Effect from e+e−→J/ψ+X+γe^+ e^-\to{J/\psi}+X+\gamma at B Factory

We study the initial state radiation process $e^+ e^-\to{J/\psi}+X+\gamma$ for $J/\psi$ production at B factory, and find the cross section is 61% larger than it's Born one for color octet part and is about half as it's Born one for color singlet part. Furthermore, the color singlet and color octet signal are very clearly separated in it's $E_\gamma$ spectra due to kinematics difference. We suggest to measure this $E_\gamma$ spectra at B factory to determine the color octet effect.Comment: 4 pages, 4 figures and 1 tabl

Raman spectroscopy of epitaxial graphene on a SiC substrate

The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical to its electronic and physical properties. In this work, Raman spectroscopy was used to study the structure of EG and its interaction with SiC substrate. All the Raman bands of EG blue shift from that of bulk graphite and graphene made by micromechanical cleavage, which was attributed to the compressive strain induced by the substrate. A model containing 13 x 13 honeycomb lattice cells of graphene on carbon nanomesh was constructed to explain the origin of strain. The lattice mismatch between graphene layer and substrate causes the compressive stress of 2.27 GPa on graphene. We also demonstrate that the electronic structures of EG grown on Si and C terminated SiC substrates are quite different. Our experimental results shed light on the interaction between graphene and SiC substrate that are critical to the future applications of EG.Comment: 20 pages, 5 figure

An optical study of interdiffusion in ZnSe/ZnCdSe

Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 69, 1579 (1996) and may be found at

STM studies of epitaxial graphene

This article reviews the use of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to characterize the physical and electronic properties of epitaxial graphene. Topographical variations revealed by STM allow the determination of the number of graphene layers and the detection of lattice mismatch between the graphene and the substrate, as well as rotational disorder. STS allows the local electronic characterization of graphene. STM/STS can also be used to perform local studies of graphene modification through processes such as atomic/molecular adsorption and intercalation

The DNA damage checkpoint pathway promotes extensive resection and nucleotide synthesis to facilitate homologous recombination repair and genome stability in fission yeast.

DNA double-strand breaks (DSBs) can cause chromosomal rearrangements and extensive loss of heterozygosity (LOH), hallmarks of cancer cells. Yet, how such events are normally suppressed is unclear. Here we identify roles for the DNA damage checkpoint pathway in facilitating homologous recombination (HR) repair and suppressing extensive LOH and chromosomal rearrangements in response to a DSB. Accordingly, deletion of Rad3(ATR), Rad26ATRIP, Crb2(53BP1) or Cdc25 overexpression leads to reduced HR and increased break-induced chromosome loss and rearrangements. We find the DNA damage checkpoint pathway facilitates HR, in part, by promoting break-induced Cdt2-dependent nucleotide synthesis. We also identify additional roles for Rad17, the 9-1-1 complex and Chk1 activation in facilitating break-induced extensive resection and chromosome loss, thereby suppressing extensive LOH. Loss of Rad17 or the 9-1-1 complex results in a striking increase in break-induced isochromosome formation and very low levels of chromosome loss, suggesting the 9-1-1 complex acts as a nuclease processivity factor to facilitate extensive resection. Further, our data suggest redundant roles for Rad3ATR and Exo1 in facilitating extensive resection. We propose that the DNA damage checkpoint pathway coordinates resection and nucleotide synthesis, thereby promoting efficient HR repair and genome stability

Predictable arguments of knowledge

We initiate a formal investigation on the power of predictability for argument of knowledge systems for NP. Specifically, we consider private-coin argument systems where the answer of the prover can be predicted, given the private randomness of the verifier; we call such protocols Predictable Arguments of Knowledge (PAoK). Our study encompasses a full characterization of PAoK, showing that such arguments can be made extremely laconic, with the prover sending a single bit, and assumed to have only one round (i.e., two messages) of communication without loss of generality. We additionally explore PAoK satisfying additional properties (including zero-knowledge and the possibility of re-using the same challenge across multiple executions with the prover), present several constructions of PAoK relying on different cryptographic tools, and discuss applications to cryptography

Experimental observation of the crystallization of a paired holon state

A new excitation is observed at 201 meV in the doped-hole ladder cuprate Sr$_{14}$Cu$_{24}$O$_{41}$, using ultraviolet resonance Raman scattering with incident light at 3.7 eV polarized along the direction of the rungs. The excitation is found to be of charge nature, with a temperature independent excitation energy, and can be understood via an intra-ladder pair-breaking process. The intensity tracks closely the order parameter of the charge density wave in the ladder (CDW$_L$), but persists above the CDW$_L$ transition temperature ($T_{CDW_L}$), indicating a strong local pairing above $T_{CDW_L}$. The 201 meV excitation vanishes in La$_{6}$Ca$_{8}$Cu$_{24}$O$_{41+\delta}$, and La$_{5}$Ca$_{9}$Cu$_{24}$O$_{41}$ which are samples with no holes in the ladders. Our results suggest that the doped holes in the ladder are composite bosons consisting of paired holons that order below $T_{CDW}$.Comment: Accepted for publication in Physical Review Letters (4 figures

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.Comment: 5 figures; Supplementary materials included at the end of the main tex