Mr. Pickwick Was Roused: Sleeping and Awakening in The Pickwick Papers

An earlier version of this paper was presented orally in Japanese at the Annual Conference of the English Literary Society of Kyoto University on 13 November, 2021

First-principles study on field evaporation for silicon atom on Si(001) surface

The simulations of field-evaporation processes for silicon atoms on various Si(001) surfaces are implemented using the first-principles calculations based on the real-space finite-difference method. We find that the atoms which locate on atomically flat Si(001) surfaces and at step edges are easily removed by applying external electric field, and the threshold value of the external electric field for evaporation of atoms on atomically flat Si(001) surfaces, which is predicted between 3.0 and 3.5 V/\AA, is in agreement with the experimental data of 3.8 V/\AA. In this situation, the local field around an evaporating atom does not play a crucial role. This result is instead interpreted in terms of the bond strength between an evaporating atom and surface.Comment: 5 pages and 4 figure

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO2_2 Interfaces

We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the lattice mismatch are compared with those from the Si/SiO$_2$ interface. The energy advantages of the Ge/GeO$_2$ are found to be smaller than those of the Si/SiO$_2$ because of the high flexibility of the bonding networks in GeO$_2$. Thus, the suppression of the Ge-atom emission during the oxidation process leads to the improved electrical properties of the Ge/GeO$_2$ interfaces