Tuning a Circular p-n Junction in Graphene from Quantum Confinement to Optical Guiding

The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene electron-optics platform. An open question arising from the possibility of reducing the component-size to the nanometer-scale is how to access and understand the transition from optical-transport to quantum-confinement. Here we report on the realization of a circular p-n junction that can be continuously tuned from the nanometer-scale, where quantum effects are dominant, to the micrometer scale where optical-guiding takes over. We find that in the nanometer-scale junction electrons are trapped in states that resemble atomic-collapse at a supercritical charge. As the junction-size increases, the transition to optical-guiding is signaled by the emergence of whispering-gallery modes and Fabry-Perot interference. The creation of tunable junctions that straddle the crossover between quantum-confinement and optical-guiding, paves the way to novel design-architectures for controlling electronic transport.Comment: 16 pages, 4 figure

Genomic and Proteomic Analyses of the Fungus Arthrobotrys oligospora Provide Insights into Nematode-Trap Formation

Nematode-trapping fungi are “carnivorous” and attack their hosts using specialized trapping devices. The morphological development of these traps is the key indicator of their switch from saprophytic to predacious lifestyles. Here, the genome of the nematode-trapping fungus Arthrobotrys oligospora Fres. (ATCC24927) was reported. The genome contains 40.07 Mb assembled sequence with 11,479 predicted genes. Comparative analysis showed that A. oligospora shared many more genes with pathogenic fungi than with non-pathogenic fungi. Specifically, compared to several sequenced ascomycete fungi, the A. oligospora genome has a larger number of pathogenicity-related genes in the subtilisin, cellulase, cellobiohydrolase, and pectinesterase gene families. Searching against the pathogen-host interaction gene database identified 398 homologous genes involved in pathogenicity in other fungi. The analysis of repetitive sequences provided evidence for repeat-induced point mutations in A. oligospora. Proteomic and quantitative PCR (qPCR) analyses revealed that 90 genes were significantly up-regulated at the early stage of trap-formation by nematode extracts and most of these genes were involved in translation, amino acid metabolism, carbohydrate metabolism, cell wall and membrane biogenesis. Based on the combined genomic, proteomic and qPCR data, a model for the formation of nematode trapping device in this fungus was proposed. In this model, multiple fungal signal transduction pathways are activated by its nematode prey to further regulate downstream genes associated with diverse cellular processes such as energy metabolism, biosynthesis of the cell wall and adhesive proteins, cell division, glycerol accumulation and peroxisome biogenesis. This study will facilitate the identification of pathogenicity-related genes and provide a broad foundation for understanding the molecular and evolutionary mechanisms underlying fungi-nematodes interactions

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal

The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films

Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpolar a-plane (1120) GaN films with a subsequent thermal annealing process. The impact of the implantation dose on the structural. morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD). atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the structural and morphological characteristics of samples deteriorated with the increase of implantation dose. According to the SQUID analysis. obvious room-temperature ferromagnetic properties of samples were detected. Moreover, the saturation magnetization per Cu atom decreased as the implantation dose increased. (C) 2009 Elsevier B.V. All rights reserved

Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films

Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(1 1 (2) over bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 mu(B)/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly. (C) 2009 Elsevier B. V. All rights reserved

Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film

Temperature dependences of the polarized Raman scattering spectra in the backscattering configuration of the nonpolar a-plane (or [11 (2) over bar0]-oriented) GaN thin film are analyzed in the range from 100 to 570 K. The nonpolar a-plane GaN film is grown on an r-plane [or (1 (1) over bar 02)-oriented] sapphire substrate by metal organic chemical vapor deposition. The spectral features of the Raman shifts, intensities, and linewidths of the active phonons modes A(1)(TO), E-1(TO), and E-2(high) are significantly revealed, and corresponding temperature coefficients are well deduced by the empirical relationships. With increasing the measurement temperature the Raman frequencies are substantially redshifted and the linewidths gradually broaden. The compressive-strain-free temperature for the nonpolar a-plane GaN film is found to be at about 400 K. Our studies will lead to a better understanding of the fundamental physical characteristics of the nonpolar GaN film. (c) 2007 American Institute of Physics