Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859

Probing of individual semiconductor nanowhiskers by TEM-STM

Along with rapidly developing nanotechnology, new types of analytical instruments and techniques are needed. Here we report an alternative procedure for electrical measurements on semiconductor nanowhiskers, allowing precise selection and visual control at close to atomic resolution. We use a combination of two powerful microscope techniques, scanning tunneling microscopy (STM) and simultaneous viewing in a transmission electron microscope (TEM). The STM is mounted in the sample holder for the TEM. We describe here a method for creating an ohmic contact between the STM tip and the nanowhisker. We examine three different types of STM tips and present a technique for cleaning the STM tip in situ. Measurements on 1-mum-tall and 40-nm-thick epitaxially grown InAs nanowhiskers show an ohmic contact and a resistance of down to 7 kOmega

Multiple exciton generation in nano-crystals revisited: Consistent calculation of the yield based on pump-probe spectroscopy

Multiple exciton generation (MEG) is a process in which more than one exciton is generated upon the absorption of a high energy photon, typically higher than two times the band gap, in semiconductor nanocrystals. It can be observed experimentally using time resolved spectroscopy such as the transient absorption measurements. Quantification of the MEG yield is usu- ally done by assuming that the bi-exciton signal is twice the signal from a single exciton. Herein we show that this assumption is not always justified and may lead to significant errors in the estimated MEG yields. We develop a methodology to determine proper scaling factors to the signals from the transient absorption experiments. Using the methodology we find modest MEG yields in lead chalcogenide nanocrystals including the nanorods

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct measurement of the catalyst composition of individual gold seeded GaAs nanowires inside an electron microscope as they grow. The Ga content in the catalyst during growth increased with both temperature and Ga precursor flux. A direct comparison of the calculated phase diagrams of the Au-Ga-As ternary system to the measured catalyst composition not only lets us estimate the As content in the catalyst but also indicates the relevance of phase diagrams to understanding nanowire growth

In situ etching for total control over axial and radial nanowire growth

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching

GaAsP Nanowires Grown by Aerotaxy

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires

In situ XAS study of the local structure and oxidation state evolution of palladium in a reduced graphene oxide supported Pd(II) carbene complex during an undirected C–H acetoxylation reaction

In situ X-ray absorption spectroscopy (XAS) investigations have been performed to provide insights into the reaction mechanism of a palladium(II) catalyzed undirected C–H acetoxylation reaction in the presence of an oxidant. A Pd(II) N-heterocyclic carbene complex π-stacked onto reduced graphene oxide (rGO) was used as the catalyst. The Pd speciation during the catalytic process was examined by XAS, which revealed a possible mechanism over the course of the reaction. Pd(II) complexes in the as-synthesized catalyst first go through a gradual ligand substitution where chloride ions bound to Pd(II) are replaced by other ligands with a mean bond distance to Pd matching Pd–C/N/O. Parallel to this the mean oxidation state of Pd increases indicating the formation of Pd(IV) species. At a later stage, a fraction of the Pd complexes start to slowly transform into Pd nanoclusters. The mean average oxidation state of Pd decreases to the initial state at the end of the experiment which means that comparable amounts of Pd(0) and Pd(IV) are present. These observations from heterogeneous catalysis are in good agreement with its homogeneous analog and they support a Pd(II)–Pd(IV)–Pd(II) reaction mechanism