2 research outputs found
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Control and Elimination of Cracking of AlGaN Using Low-Temperature AlGaN Interlayers
We demonstrate that the insertion of low-temperature (LT) AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of AlGaN directly upon GaN epilayers., Stress evolution and relaxation is monitored using an in-situ optical stress sensor. The combination of in-situ and ex-situ. characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters
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AlGaN Materials Engineering for Integrated Multi-Function Systems
This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates