Effects of annealing temperature on sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor

Hafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated. © 2008 IEEE.published_or_final_versio

Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment

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Improved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor

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Enhanced sensing performance of MISiC schottky-diode hydrogen sensor by using HfON as gate insulator

MISiC Schottky-diode hydrogen sensor with HfON gate insulator fabricated by NO nitridation is investigated. The hydrogen-sensing characteristics of this novel sensor are studied by doing steady-state and transient measurements at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that this novel sensor can rapidly respond to hydrogen variation and can give a significant response even at a low H 2 concentration of 48-ppm, e.g., a sensitivity of 81% is achieved at 450°C and 2.5 V, which is two times higher than its HfO 2 counterpart. The enhanced sensitivity of the device should be attributed to a remarkable reduction of the current of the sensor before hydrogen exposure by the NO nitridation because the NO nitridation can passivate the O vacancies in the insulator and facilitate the formation of a SiO 2 interlayer to suppress the leakage current associated with high-k materials. © 2006 IEEE.published_or_final_versio

Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant

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Klebsiella pneumoniae necrotizing fasciitis associated with diabetes and liver cirrhosis [9]

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Axial alignment of the lower extremity in Chinese adults

Background: The restoration of normal axial alignment of the lower extremity is important to surgeons who perform reconstructive surgery of the knee. However, data on the normal alignment of the lower extremity in Chinese adults are not available. Methods: The axial alignment of the lower extremity in twenty-five adult male and twenty-five adult female volunteers of southern Chinese origin was measured on weight-bearing radiographs of the entire lower limb. The mean age was twenty-four years for the male volunteers and twenty-three years for the female volunteers. The results were compared with those of two similar studies of white volunteers in the United States. Results: The medial inclination of the tibial plateau in the Chinese subjects (mean and standard deviation, 5.4 ± 2.5 degrees for women and 4.9 ± 2.3 degrees for men) was greater than the commonly reported 3 degrees. The extremities of the Chinese women were found to have a mean of 2.2 ± 2.5 degrees of varus alignment, and those of the Chinese men had a mean of 2.2 ± 2.7 degrees of varus alignment. Conclusions: Compared with the white subjects described in the studies by Moreland et al. and Hsu et al., the Chinese subjects had significantly larger medial inclination of the knee joint (knee-joint obliquity) (p < 0.005) and the female Chinese subjects had significantly more varus alignment of the lower extremity (p < 0.025). Clinical Relevance: Five degrees of external rotation of the femoral component, instead of the commonly reported 3 degrees, may be required to obtain a rectangular flexion gap in total knee arthroplasty in Chinese patients. The racial difference in the knee-joint obliquity may contribute to the racial difference in the ratio of knee osteoarthritis to hip osteoarthritis. Additional studies are necessary to confirm this relationship.published_or_final_versio

Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

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A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations

MISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases (nitric oxide (NO), N 2O, and NH 3) are fabricated. Steady-state and transien-t-response measurements are carried out at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that these nitrided sensors have high sensitivity and can give a rapid and stable response over a wide range of temperature. This paper also finds that N 2O provides the fastest insulator growth with good insulator quality and hence the highest sensitivity among the three nitrided samples. The N 2O- nitrided sensor can give a significant response even at a low H 2 concentration of 48-ppm H 2 in N 2, indicating a potential application for detecting hydrogen leakage at high temperature. Moreover, the three nitrided samples respond faster than the control sample. At 300°C, the response times of the N 2O, NO, and NH 3-nitrided sample to the 48-ppm H 2 in N 2 are 11, 11, and 37 s, respectively, as compared to 65 s for the control sample without the gate insulator. © 2006 IEEE.published_or_final_versio

On the voltage dependence of sensitivity for Schottky-type gas sensor

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