Transactional Memory: Glimmer of a Theory

Transactional memory (TM) is a promising paradigm for concurrent programming. This paper is an overview of our recent theoretical work on defining a theory of TM. We first recall some TM correctness properties and then overview results on the inherent power and limitations of TMs

ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA

The properties of glow discharge µc Si have been investigated by conductivity, Hall effect and field effect measurements as a function of crystallite size and phosphorus doping ratio. It is concluded that the large increase in σ over a-Si is almost entirely caused by an increased carrier density resulting from delocalised electron tail states. The sign of the Hall constant remains normal down to an extrapolated crystallite size of about 20A

APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

This paper reviews the development and applications of a-Si insulated gate field effect transistors which have become a subject of much current interest. The physical principles underlying the operation of the devices, their fabrication and their static and dynamic characteristics are discussed in the first part of the paper. Recent work on the application of these devices in addressable liquid crystal display panels, in basic integrated logic circuits and in addressable image sensing arrays is then reviewed in some detail

SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS

The paper deals with the results from two current projects. In the first, concerned with materials assessment, simple transient techniques have been applied to p-i-n photovoltaic cells. The measurements give information on the internal field and on the transport and the lifetime of generated holes. The second part of the paper deals with the results of implantation experiments in which the upper part of the junction is formed by P-or Alkali-ion implantation

INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS

We present a detailed study of electroluminescence (EL) spectra and EL quantum efficiency in well characterised a-Si p+-i-n+ junctions under forward bias. The PL characteristics of the i region were probed using laser excitation. Some factors controlling EL efficiency are discussed. EL and PL recombination models are compared and discussed