Exciton Spin Dynamics in Semiconductor Quantum Wells

In this paper we will review Exciton Spin Dynamics in Semiconductor Quantum Wells. The spin properties of excitons in nanostructures are determined by their fine structure. We will mainly focus in this review on GaAs and InGaAs quantum wells which are model systems.Comment: 55 pages, 27 figure

INTERFACE RELATED EMISSION FROM AN MBE-GROWN (Al, Ga) As HETEROSTRUCTURE

On rapporte l'observation d'un nouveau détail spectral dans la luminescence d'une hétérostructure ultrapure de GaAs-Al0.33Ga0.67As crue par EJM. Cette émission, centrée à 1,510 eV, disparaît en dissolvant la couche supérieure de Al0.33Ga0.67As. Ceci indique un rôle important de l'hétérointerface dans la mécanisme de recombination qui cause ce détail nouveau. De ce point de vue, on discute l'effet de quelques paramètres expérimentaux aux propriétés luminescantes.We report the observation of a novel feature in the luminescence of an ultra-pure MBE-grown GaAs-Al0.33Ga0.67As heterostructure. This emission, centered at 1.510 eV, disappears on removing the top cladding Al0.33Ga0.67As layer, pointing to an important role of the heterointerface in the recombination mechanism leading to this novel band. From this perspective, we discuss the effect of several experimental parameters on the luminescent properties