Recent Advancements in TiO2 Nanostructures: Sustainable Synthesis and Gas Sensing

The search for sustainable technology-driven advancements in material synthesis is a new norm, which ensures a low impact on the environment, production cost, and workers' health. In this context, non-toxic, non-hazardous, and low-cost materials and their synthesis methods are integrated to compete with existing physical and chemical methods. From this perspective, titanium oxide (TiO2) is one of the fascinating materials because of its non-toxicity, biocompatibility, and potential of growing by sustainable methods. Accordingly, TiO2 is extensively used in gas-sensing devices. Yet, many TiO2 nanostructures are still synthesized with a lack of mindfulness of environmental impact and sustainable methods, which results in a serious burden on practical commercialization. This review provides a general outline of the advantages and disadvantages of conventional and sustainable methods of TiO2 preparation. Additionally, a detailed discussion on sustainable growth methods for green synthesis is included. Furthermore, gas-sensing applications and approaches to improve the key functionality of sensors, including response time, recovery time, repeatability, and stability, are discussed in detail in the latter parts of the review. At the end, a concluding discussion is included to provide guidelines for the selection of sustainable synthesis methods and techniques to improve the gas-sensing properties of TiO2

Synthesis and characterization of mixed oxide nanowires for gas sensing

A healthy and long-lasting life is the utmost wish of any living being thus aging. The aging phenomenon cannot be stopped but may be controlled to some extent when we live in appropriate environments. Usually, the outdoor environment is polluted by two means natural events (windblown dust, volcano eruptions, etc.) and man-made ones (burning of facile fuels, factories, volatile organic compounds, etc.). Pollution due to harmful air such as sulfur oxides (SO2), nitrogen oxides (NOX), carbon monoxide (CO), ammonia (NH3), methane (CH4), and volatile organic compounds (VOCs) is one of the significant issues since it is more sensitive to compromising the natural ecosystem and environment. So, exposure to these compounds worsens the aging phenomena of the living being (headache, fainting, skin and eye irradiation, respiratory infections, heart disease, lung cancer, and even superficial death). Therefore, it is necessary the detection these compounds in the environment. Accordingly, metal oxides (MOXs) gas sensors have conventionally been employed to detect and quantify harmful gases in both indoor and outdoor environments. However, one of the major problems with these sensors is achieving selective detection. Herein, we propose a novel design with two metal oxides (ZnO and Co3O4) that provide very high gas response together with superior selectivity. The proposed structure is a one-dimensional (1D) metal oxide composite; Co3O4/ZnO nanowires. The composite was prepared by in-situ thermal oxidation of metallic Co thin layer (50 nm) and evaporation of ZnO powder at a temperature of 800 ᵒC at a pressure of 0.15 mbar. The pressure was maintained by a controlled mixture of O2 and Ar. The morphological, compositional, and structural analyses are evidence of the successful growth of the Co3O4/ZnO composite nanowire with the root of Co3O4 and the tip with Pt (catalyzer) and Co3O4. The gas sensing characterization shows exciting sensing functionality towards acetone (C3H6O) compared to that of tested gases (C2H5OH, H2S, NH3, CO, NO2, and H2). The reported highest response (ΔG/G; G is the conductance) was above the value of 5000 toward 50 ppm (parts per million) C3H6O at 40 RH% air when working at 250 °C with the potential of detecting sub ppb (parts per billion) concentration levels of C3H6O. The very high C3H6O sensing performance together with exceptionally high selectivity of the sensor ascribed to Pt nanoparticle and the Co3O4 section on the tip of the Co3O4/ZnO. Moreover, the formation of heterojunctions, synergistic gas sensing, and the catalytic activity of the proposed design enhances the response of the sensors. Accordingly, scanning electron microscopic (SEM), transmission electron microscope (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) characterization, and the sensing mechanisms are comprehensively discussed at the conference

Effects of hospital facilities on patient outcomes after cancer surgery: an international, prospective, observational study

Background Early death after cancer surgery is higher in low-income and middle-income countries (LMICs) compared with in high-income countries, yet the impact of facility characteristics on early postoperative outcomes is unknown. The aim of this study was to examine the association between hospital infrastructure, resource availability, and processes on early outcomes after cancer surgery worldwide.Methods A multimethods analysis was performed as part of the GlobalSurg 3 study-a multicentre, international, prospective cohort study of patients who had surgery for breast, colorectal, or gastric cancer. The primary outcomes were 30-day mortality and 30-day major complication rates. Potentially beneficial hospital facilities were identified by variable selection to select those associated with 30-day mortality. Adjusted outcomes were determined using generalised estimating equations to account for patient characteristics and country-income group, with population stratification by hospital.Findings Between April 1, 2018, and April 23, 2019, facility-level data were collected for 9685 patients across 238 hospitals in 66 countries (91 hospitals in 20 high-income countries; 57 hospitals in 19 upper-middle-income countries; and 90 hospitals in 27 low-income to lower-middle-income countries). The availability of five hospital facilities was inversely associated with mortality: ultrasound, CT scanner, critical care unit, opioid analgesia, and oncologist. After adjustment for case-mix and country income group, hospitals with three or fewer of these facilities (62 hospitals, 1294 patients) had higher mortality compared with those with four or five (adjusted odds ratio [OR] 3.85 [95% CI 2.58-5.75]; p<0.0001), with excess mortality predominantly explained by a limited capacity to rescue following the development of major complications (63.0% vs 82.7%; OR 0.35 [0.23-0.53]; p<0.0001). Across LMICs, improvements in hospital facilities would prevent one to three deaths for every 100 patients undergoing surgery for cancer.Interpretation Hospitals with higher levels of infrastructure and resources have better outcomes after cancer surgery, independent of country income. Without urgent strengthening of hospital infrastructure and resources, the reductions in cancer-associated mortality associated with improved access will not be realised

P‐Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

This review focuses on the synthesis of p‐type metal‐oxide (p‐type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical‐sensing applications. P‐type MOX thin films exhibit several advantages over n‐type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p‐MOX thin films are reviewed herein. Physical vapor‐deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular‐beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid‐phase routes, including sol–gel‐assisted dip‐and‐spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p‐type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p‐type MOX thin films. Future trends to overcome the challenges of p‐type MOX thin‐film chemical sensors are also presented

Progress towards chemical gas sensors: Nanowires and 2D semiconductors

There is a great interest in portable gas sensing technologies to provide real-time monitoring of indoor and outdoor air quality as well as the human health diagnostics. One-dimensional metal oxide nanowires have demonstrated improved properties compared to the conventional thick film gas sensors. Furthermore, two-dimensional semiconductor nanomaterials have shown great promise for the development of high performance functional devices owing to their unique physical, chemical and electrical characteristics. Hence, they become one of the most investigated structures for the fabrication of detection systems. Herein, we present an overview of the synthesis and sensing properties of metal oxide nanowires and two-dimensional semiconductor nanostructures such as metal-organic frameworks, graphene and transition metal dichalcogenides. We discuss the current achievements and issues in the preparation of pure, doped and composite materials comprising metal oxide nanowires and two-dimensional semiconductors. Then, we discuss the advances in gas sensing performances of the aforementioned materials considering their morphology, compositions and structure. Afterward, we provide a brief summary along with the opportunities and challenges for future fabrication of high performance and small size gas sensing devices

Revolutionizing n-type Co3O4 Nanowire for Hydrogen Gas Sensing

This study presents conductometric sensors based on Co3O4 nanowires for hydrogen detection at ppb levels. The nanowires are synthesized through thermal oxidation of a 50 nm cobalt layer, exhibiting diameters between 6-50 nm and lengths of 1-5 & mu;m, primarily growing along the (311) direction of spinal Co3O4. Raman investigation reveals five characteristic peaks at 195, 482, 521, 620, and 692 cm(-1), corresponding to symmetric phonon modes of crystalline Co3O4. Electron paramagnetic resonance measurements confirm the presence of a ferromagnetic phase, attributed to incomplete cobalt oxidation, which disappears after 8 h of thermal aging at 400 & DEG;C. Conductometry measurements are performed in the temperature range of 300-500 & DEG;C. At temperatures above 300 & DEG;C, sensors exhibit abnormal n-type semiconducting behavior due to lattice oxygen's involvement in the hydrogen sensing mechanism. Operating at 450 & DEG;C in dry air, the sensor shows a higher 232% response to 100 ppm H-2 compared to ethanol, acetone, methane, carbon monoxide, and nitrogen dioxide. Remarkably, the sensor maintains a consistent conductance baseline even under high humidity (90%) for 25 d, with three-cycle repeatability. This distinctive gas-sensing capability is attributed to the catalytic activity and elevated operating temperature

A study on CdCl2 activation of CBD-CdS films

Cadmium sulfide (CdS) thin films were deposited using chemical bath deposition (CBD) technique on fluorine-doped tin oxide glass substrates. Cadmium sulfate, thiourea, and ammonium hydroxide were used as Cd source, S source, and the complexing agent, respectively in the reaction bath. The post-deposition CdCl2 activation of chemical bath deposited CdS (CBD-CdS) thin films was done by dip coating in a saturated CdCl2 bath. X-ray diffractograms show the growth of large CdS grains with better crystalline quality over the recrystallization process due to CdCl2 treatment. The development of large clusters was determined to be due to coalescence of smaller clusters. The photoelectrochemical (PEC) cell (CdS/Na2S2O3/Pt) parameters, such as VOC and ISC for CdCl2 activated CBD-CdS thin films were found to be higher compared to untreated CBD-CdS thin films. The improved effective surface area of the film and higher carrier concentration due to grain boundary passivation could be the reason for higher VOC and ISC values found in CdCl2-treated CdS films. Additionally, all the CdCl2-treated CdS films showed an increase in the optical transmittance spectra and bandgap compared to untreated CdS films. Relative energy band edge position of the grown CdS films was found to be adjustable with the CdCl2 treatment time. The best photoactivity was found for the CdS films which were dip-coated for 10 min in CdCl2 solution

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N₂ Purging and N₂ Annealing

The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films