25,673 research outputs found
Absence of ferromagnetism in V-implanted ZnO single crystals
The structural and magnetic properties of V doped ZnO are presented. V ions
were introduced into hydrothermal ZnO single crystals by ion implantation with
fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was
performed in high vacuum from 823 K to 1023 K. The ZnO host material still
partly remains in a crystalline state after irradiation, and is partly
recovered by annealing. The V ions show a thermal mobility as revealed by depth
profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction
revealed no secondary phase formation which indicates the substitution of V
onto Zn site. However in all samples no pronounced ferromagnetism was observed
down to 5 K by a superconducting quantum interference device magnetometer.Comment: 13 pages, 4 figs, MMM conference 2007, accepted by J. Appl. Phy
Identification of the dominant diffusing species in silicide formation
Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si
Superlattice interface and lattice strain measurement by ion channeling
[[abstract]]The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly.[[incitationindex]]SCI[[booktype]]紙本[[booktype]]電子
- …