Electron backscattering in a cavity: ballistic and coherent effects

Numerous experimental and theoretical studies have focused on low-dimensional systems locally perturbed by the biased tip of a scanning force microscope. In all cases either open or closed weakly gate-tunable nanostructures have been investigated, such as quantum point contacts, open or closed quantum dots, etc. We study the behaviour of the conductance of a quantum point contact with a gradually forming adjacent cavity in series under the influence of a scanning gate. Here, an initially open quantum point contact system gradually turns into a closed cavity system. We observe branches and interference fringes known from quantum point contacts coexisting with irregular conductance fluctuations. Unlike the branches, the fluctuations cover the entire area of the cavity. In contrast to previous studies, we observe and investigate branches under the influence of the confining stadium potential, which is gradually built up. We find that the branches exist only in the area surrounded by cavity top gates. As the stadium shrinks, regular fringes originate from tip-induced constrictions leading to quantized conduction. In addition, we observe arc-like areas reminiscent of classical electron trajectories in a chaotic cavity. We also argue that electrons emanating from the quantum point contact spread out like a fan leaving branch-like regions of enhanced backscattering.Comment: 7 pages, 4 figure

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes

The phase plane of moving discrete breathers

We study anharmonic localization in a periodic five atom chain with quadratic-quartic spring potential. We use discrete symmetries to eliminate the degeneracies of the harmonic chain and easily find periodic orbits. We apply linear stability analysis to measure the frequency of phonon-like disturbances in the presence of breathers and to analyze the instabilities of breathers. We visualize the phase plane of breather motion directly and develop a technique for exciting pinned and moving breathers. We observe long-lived breathers that move chaotically and a global transition to chaos that prevents forming moving breathers at high energies.Comment: 8 pages text, 4 figures, submitted to Physical Review Letters. See http://www.msc.cornell.edu/~houle/localization

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds

The electron-hole liquid in a polar semiconductor: Cubic SiC

The binding energy EB = (17 +/- 3) meV and density n = (9.2 +/- 1.7) x 1018 cm-3 of the EHL in cubic SiC are determined from excitation-dependent spectra. Comparing these values with ground state properties calculated with and without electron-phonon-interaction using newly determined valence band parameters evidence for the importance of e.p.i. in SiC is found.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/23743/1/0000715.pd

Diffusion and viscosity in a supercooled polydisperse system

We have carried out extensive molecular dynamics simulations of a supercooled polydisperse Lennard-Jones liquid with large variations in temperature at a fixed pressure. The particles in the system are considered to be polydisperse both in size and mass. The temperature dependence of the dynamical properties such as the viscosity ($\eta$) and the self-diffusion coefficients ($D_i$) of different size particles is studied. Both viscosity and diffusion coefficients show super-Arrhenius temperature dependence and fit well to the well-known Vogel-Fulcher-Tammann (VFT) equation. Within the temperature range investigated, the value of the Angell's fragility parameter (D $\approx 1.4$) classifies the present system into a strongly fragile liquid. The critical temperature for diffusion ($T_o^{D_i}$) increases with the size of the particles. The critical temperature for viscosity ($T_o^{\eta}$) is larger than that for the diffusion and a sizeable deviations appear for the smaller size particles implying a decoupling of translational diffusion from viscosity in deeply supercooled liquid. Indeed, the diffusion shows markedly non-Stokesian behavior at low temperatures where a highly nonlinear dependence on size is observed. An inspection of the trajectories of the particles shows that at low temperatures the motions of both the smallest and largest size particles are discontinuous (jump-type). However, the crossover from continuous Brownian to large length hopping motion takes place at shorter time scales for the smaller size particles.Comment: Revtex4, 7 pages, 8 figure

First principles study of strain/electronic interplay in ZnO; Stress and temperature dependence of the piezoelectric constants

We present a first-principles study of the relationship between stress, temperature and electronic properties in piezoelectric ZnO. Our method is a plane wave pseudopotential implementation of density functional theory and density functional linear response within the local density approximation. We observe marked changes in the piezoelectric and dielectric constants when the material is distorted. This stress dependence is the result of strong, bond length dependent, hybridization between the O $2p$ and Zn $3d$ electrons. Our results indicate that fine tuning of the piezoelectric properties for specific device applications can be achieved by control of the ZnO lattice constant, for example by epitaxial growth on an appropriate substrate.Comment: accepted for publication in Phys. Rev.