Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

Gallium Nitride is becoming an interesting solution for low-noise applications in the lower part of the millimetre-wave spectrum and is gaining increasing attention in the space community for microwave receiver functionalities. Lately, its maturity level has increased and its performance in terms of noise figure and operating frequency is reaching other advanced III-V technologies such as Gallium Arsenide and Indium Phoshpide. Moreover, Gallium Nitride features higher power handling capability in comparison to the previously mentioned III-V technologies. In this context, we have designed and characterized two demonstrator circuits of critical microwave receiver functionalities: a Low-Noise Amplifier and a Low-Distortion Amplifier operating at Ka-band. It is shown that GaN circuits compare well in terms of noise figure, gain, and operating frequency with respect to other advanced III-V technologies, and most of all exhibit superior linearity in terms of intermodulation distortion. The designed Low-Noise Amplifier exhibits state-of-the-art 1.2 dB Noise Figure in the 27-31 GHz bandwidth thanks to a profitable combination of 60- and 100-nm gate length transistors on the same MMIC. On the other hand, the Low-Distortion Amplifier features state-of-the-art +30 dBm Output Third Order Intercept point in the same operating bandwidth while requiring only 216 mW dc power. The presented electrical performances are validated by comparing these designs to others available in open literature through figures of merit that normalize trade-offs by transistor length (therefore a fair comparison) aiming to highlight the merits of the proposed design methodologies

GaN LNAs for Robust Receiving Systems in Radar and Space Applications

In this contribution a series of integrated circuits and methodologies, purposely developed for application in microwave receiving subsystems, will be presented. The integrated circuits, realized in GaN integrated technologies by different suppliers, find their applications in telecom systems as well as in RADAR ones, mainly for space-based apparatuses. The respective performance, as well as the key design methods will be presented in the contribution for bandwidths ranging from S-Band up to K-Band

Linear characterization and modeling of GaN-on-Si HEMT technologies with 100 nm and 60 nm gate lengths

Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate length) and D006GH (60 nm gate length). This objective is pursued by means of both classical and more novel approaches. In particular, the latter include a nondestructive method for determining the extrinsic resistances and an optimizaion-based approach to extracting the remaining parasitic elements: these support standard DC and RF measurements in order to obtain a scalable, bias-dependent equivalent-circuit model capturing the small-signal behavior of the two processes. As to the noise model, this is extracted by applying the well known noise-temperature approach to noise figure measurements performed in two different frequency ranges: a lower band, where a standard Y-factor test bench is used, and an upper band, where a custom cold-source test bench is set up and described in great detail. At 5 V drain-source voltage, minimum noise figures as low as 1.5 dB and 1.1 dB at 40 GHz have been extracted for the considered 100 nm and 60 nm HEMTs, respectively: this testifies the maturity of both processes and the effectiveness of the gate length reduction. The characterization and modeling campaign, here presented for the first time, has been repeatedly validated by published designs, a couple of which are reviewed for the Reader’s convenience

Low power GaAs digital and analog functionalities for microwave signal conditioning in AESA systems

A MMIC demonstrator for RF phase and amplitude control with on board 18-bit serial to parallel conversion (Multi-Functional Chip) is presented. Thanks to an alternative digital building block topology, the DC power consumption of the digital serial to parallel converter is noteworthy: less than 43 mW (2 mW/bit). The main RF performances are 0° - 360° phase coverage and 0 dB - 31.5 dB attenuation setting, in the 7.6 GHz - 9.1 GHz operating bandwidth. The circuit, whose area is 6 mm2, is realised in an industrial and commercially available GaAs technology. This component can be used in active electronically scanned arrays for beam steering

Source/load-pull noise measurements at ka band

This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different termina-tions. In order for load-pull measurements to yield a significant marginal improvement (as compared to forward measurements only) it is expected that the device under test should appreciably deviate from unidirectionality. For this reason, the source/load-pull technique is applied to frequencies at which the considered devices are still usable but their reverse noise factor exhibits a measurable dependence on the output terminations. Details on the test bench set up to the purpose, covering the 20–40 GHz frequency range, are provided. A characterization campaign on a 60 nm gate length, 4 × 35 µm GaN-on-Si HEMT fabricated by OMMIC is illustrated

Gate-source distance scaling effects in H-terminated diamond MESFETs

In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate--drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs

S-band hybrid amplifiers based on hydrogenated diamond FETs

The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth

Robust LNA in GaN Technology

Low noise amplifiers realized in GaN technology are focused starting from the basic technology and state-of-the-art amplifier realizations both in hybrid and, more in particular, monolithic form. System benefits are discussed, further detailing both robustness and survivability characteristics of GaN LNAs, together with actual performance

Multi–harmonic matching network for active triplers

In this paper a design approach for active frequency triplers is introduced. The technique is based on the closed-form synthesis of distributed tuning networks implementing the desired load values at fundamental, second and third harmonic frequencies. To validate the approach, an active frequency tripler is designed and realized as a test vehicle and the resulting performances are reported