Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films

The oxidation behavior of reactively sputtered amorphous tungsten nitride of composition W_(80)N_(20) was investigated in dry and wet oxidizing ambient in the temperature range of 450 °C–575 °C. A single WO_3 oxide phase is observed. The growth of the oxide follows a parabolic time dependence which is attributed to a process controlled by the diffusivity of the oxidant in the oxide. The oxidation process is thermally activated with an activation energy of 2.5 ± 0.05 eV for dry ambient and 2.35 ± 0.05 eV for wet ambient. The pre‐exponential factor of the reaction constant for dry ambient is 1.1×10^(21) Å^2/min; that for wet ambient is only about 10 times less and is equal to 1.3×10^(20) Å^2/min