Towards an All-Silicon DV-QKD Transmitter Sourced by a Ge-on-Si Light Emitter

We investigate the behavior of a Ge-on-Si light source and demonstrate its feasibility for polarization-encoded discrete-variable quantum key distribution following the BB84 protocol, enabling a potential "all-silicon" QKD scheme which can operate well below the necessary QBER limit and successfully generate secret keys

Deployment Opportunities for DPS-QKD in the Co-Existence Regime of Lit GPON / NG-PON2 Access Networks

We demonstrate cost-effective QKD integration for GPON and NG-PON2. Operation at 5.1e-7 secure bits/pulse and a QBER of 3.28% is accomplished for a 13.5-km reach, 2:16-split PON, with 0.52% co-existence penalty for 19 classical channels

Highly sensitive 10 Gb/s PAM-4 optical receiver circuit for three-dimensional optoelectronic integration

This study presents a 0.35 µm silicon germanium bipolar complementary metal-oxide-semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three-dimensional integration. Measurements were conducted on a test-chip with a voltage-input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM-4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10 −9.Austrian Research Promotion Agency (FFG)