Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.Comment: 5 pages, 4 figure

Coherent storage of photoexcited triplet states using 29Si nuclear spins in silicon

Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the ms = \pm1 sub-levels differ significantly from that of the ms =0 state. We exploit this significant difference in decay rates to the ground singlet state to achieve nearly ~100% electron spin polarization within the triplet. We further demonstrate the transfer of a coherent state of the triplet electron spin to, and from, a hyperfine-coupled, nearest-neighbor 29Si nuclear spin. We measure the coherence time of the 29 Si nuclear spin employed in this operation and find it to be unaffected by the presence of the triplet electron spin and equal to the bulk value measured by nuclear magnetic resonance.Comment: 5 pages, 4 figure

Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $\alpha{}| \uparrow \downarrow >+\beta{}| \downarrow \uparrow >$ and $-\beta{}| \uparrow \downarrow > + \alpha{}| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $\alpha{}$ and $\beta{}$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.Comment: 6 pages, 5 figure

Optical and dynamic nuclear polarization of 29Si nuclei via photoexcited triplet states of oxygen-vacancy complexes in isotopically controlled silicon

Optical and dynamic nuclear polarization o

Nonlinear interfacial waves in a constant-vorticity planar flow over variable depth

Exact Lagrangian in compact form is derived for planar internal waves in a two-fluid system with a relatively small density jump (the Boussinesq limit taking place in real oceanic conditions), in the presence of a background shear current of constant vorticity, and over arbitrary bottom profile. Long-wave asymptotic approximations of higher orders are derived from the exact Hamiltonian functional in a remarkably simple way, for two different parametrizations of the interface shape.Comment: revtex, 4.5 pages, minor corrections, summary added, accepted to JETP Letter